Stability and precipitation kinetics in Si{sub 1{minus}y}C{sub y}/Si and Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y}/Si heterostructures prepared by solid phase epitaxy

Abstract

This study investigates the stability of metastable Si{sub 1{minus}y}C{sub y}/Si heterostructures during rapid thermal annealing (RTA) over a temperature range of 1,000--1,150 C. Heterostructures of Si{sub 1{minus}y}C{sub y}/Si and Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y}/Si (x {equals} 0.77, Y {<=} .0014) were formed by solid phase epitaxy from C implanted, preamorphized substrates using a 30 minute 700 C anneal in N{sub 2}. The occupancy of C in substitution lattice sites was monitored by Fourier Transform Infrared Absorption spectroscopy. The layer strain was monitored by rocking curve X-ray diffraction and the structural changes in the layers were determined using plan-view and X-sectional transmission electron microscopy (TEM). For anneals of 1,150 C or above, all the substitutional C was lost from the Si lattice after 30 seconds. TEM verified that the strain relaxation was the result of C precipitating into highly aligned {beta}SiC particles rather than by the formation of extended defects. No nucleation barrier was observed for the loss of substitutional C. Preliminary results will also be discussed for Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y}/Si heterostructures where there is the additional factor of the competition between strain energy and the chemical driving forces