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Hong, MunPyo

Jang, Jin Nyoung

Kim, Chiwoo

Kim, Donghoon

Kim, Minyoung

Kim, Sang-Gab

Lee, Jong Hwa

Lee, Sangheon

Lee, Sungyoun

English

Engineering Conferences International

CLEAN DRY ETCHING OF CU AND NI ALLOY METAL THIN FILM BY REACTIVE PROTON ASSISTED ETCHING  MunPyo Hong, Korea University, Korea goodmoon@korea.ac.kr Donghoon Kim, Sangheon Lee, Minyoung Kim, Sungyoun Lee, Korea University, Korea Jin Nyoung Jang, Jong Hwa Lee, Chiwoo Kim, APS Research Corporation, Korea Sang-Gab Kim, Samsung Display, Korea  Key Words: Clean Etching, Cu Dry Etching, Ni Alloy Dry Etching, Reactive Proton, Substrate Cooling  For next generation high-resolution stretchable active-matrix OLED display, the one-step dry etching process for the multi-layered electrode with the highly conductive Cu and elastic Ni alloy thin films (Fig.1) is key technology for fabrication of the lower resistance elastic bus-lines with under 1 µm line width on the backplane. To achieve the fine patterning of the Cu and the Nitinol (NiTi) based elastic metal bus-line, we are developing novel dry etching technologies. In the case of Cu & Ni-based alloys, however, they are hardly etched-out with conventional inductively coupled plasma (ICP) dry etching equipment using Ar and Cl2 gas mixture [1,2], even though they present required properties as a low resistance and high elasticity & resilience for the high-resolution stretchable electronics.  In the purpose of the clean dry etching of Cu and NiTi thin films without re-deposition of etching byproducts, we are exploring the novel dry etching process using a combination of H2 and HCl gases in a reactive ion etching  (RIE) system with low temperature susceptor sustaining under 50 ℃ and advanced ICP source that delivers high electron temperature plasma for suppling sufficient amount of H+ (proton) and Cl+ radical ions generated by the dissociative ionization of HCl gases [3,4] in a high density & high temperature plasma system, and verifying the reactive proton assisted etching (RPE) mechanism mainly contributed by the substrate surface temperature and the role of fully activated protons (H+). Reactive Ion Etching (RIE) method with low frequency RF power (under 2MHz) can enhance the plasma chemistry reactions between the radical ions (Cl+ & H+) and the Cu & Ni alloy near-surface with proper surface temperature.   Although additional research is still needed to establish the realistic etching mechanism and the best hard mask material, it has been confirmed that on step dry etching of the multi-layered electrode with Cu and Ni alloy thin film is possible at a low temperature under 50 ℃ as shown in Fig.2 & 3.         Acknowledgment  This work was supported by the Technology Innovation Program “Copper thin film dry etching process & equipment for fine patterning of low resistance metal electrode, with application to very high-resolution AMOLED panel” (20016358) and “Development of Electrode Materials and Structures with High Conductivity and Super Elasticity for Stretchable Display(20017558)” funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea)  References 1. H. J. Park, H.W. Ra, K.S. Song, Y.B. Hahn, Korean J. Chem. Eng., 21(6), 1235 (2004) 2. H. N. Cho, S.R. Min, H.J. Bae, J.H. Lee, C.W. Chung, J. Ind. Eng. Chem., Vol.13, No. 6, 939 (2007) 3. S. Harper, P. Calandra, S.D. Price, Phys. Chem. Chem. Phys.,3, 741 (2001) 4. J. Ma, H. Li, Q. Ji,W. Zhang, H. Li, F. Sun, J. Qiang, P. Lu, X.Gong, J. Wu, Phy. Rev. A, 99, 023414 (2019)   Figure 1 – The Multi-layered Electrode Structure For High-resolution Stretchable Amoled Figure 2 – fine patterning of multi-layered electrode  Figure 3 – dry etching profiles for Cu based multi-layers  

Clean dry etching of Cu and Ni alloy metal thin film by reactive proton assisted etching

https://dc.engconfintl.org/cgi/viewcontent.cgi?filename=0&article=1049&context=ulsic_vs_tft_8&type=additional

Clean dry etching of Cu and Ni alloy metal thin film by reactive proton assisted etching

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Engineering Conferences International