Employing flux-grown single crystal WSe2​, we report charge carrier
scattering behaviors measured in h-BN encapsulated monolayer field effect
transistors. We perform quantum transport measurements across various hole
densities and temperatures and observe a non-monotonic change of transport
mobility μ as a function of hole density in the degenerately doped sample.
This unusual behavior can be explained by energy dependent scattering amplitude
of strong defects calculated using the T-matrix approximation. Utilizing long
mean-free path (>500 nm), we demonstrate the high quality of our electronic
devices by showing quantized conductance steps from an
electrostatically-defined quantum point contact. Our results show the potential
for creating ultra-high quality quantum optoelectronic devices based on
atomically thin semiconductors.Comment: 6 pages, 4 figure