Ay, F.

Bradley, J.

de Ridder, R.M.

Huber, G.

Kahn, A.

Petermann, K.

Pollnau, Markus

Scheife, H.

English

The spectroscopic properties of $Al_2O_3:Er^{3+}$ thin films have been investigated by lifetime measurements. The luminescence decay curves show an initial non-exponential component, followed by an exponential tail, whose decay time decreases with increasing $Er^{3+}$ concentration. This behavior can be described with good accuracy by a microscopic treatment that takes into account both energy migration and energytransfer upconversion among $Er^{3+}$ ions. Parameters such as the migration mean time τ$_0$ and the donor-acceptor transfer probability CDA are derived. We show that, in the concentration range of interest for waveguide amplifiers at 1.5 μm, upconversion occurs mostly in the static regime

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Upconversion spectroscopy of Al2O3:Er3+ L. Agazzi1, J.D.B. Bradley1, F. Ay1, A. Kahn2, H. Scheife2, K. Petermann2, G. Huber2, R.M. de Ridder1, K. Wörhoff1, and M. Pollnau1 1Integrated Optical MicroSystems (IOMS) Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands 2Institute of Laser-Physics, University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany The spectroscopic properties of Al2O3:Er3+ thin films have been investigated by lifetime measurements. The luminescence decay curves show an initial non-exponential component, followed by an exponential tail, whose decay time decreases with increasing Er3+ concentration. This behavior can be described with good accuracy by a microscopic treatment that takes into account both energy migration and energy-transfer upconversion among Er3+ ions. Parameters such as the migration mean time τ0 and the donor-acceptor transfer probability CDA are derived. We show that, in the concentration range of interest for waveguide amplifiers at 1.5 µm, upconversion occurs mostly in the static regime. Introduction Erbium-doped amorphous aluminum oxide thin films are of great interest for applications such as integrated amplifiers and lasers. Due to the amorphous host structure, the Er3+ 4I13/2 → 4I15/2 transition typically results in a broad emission peak centered at 1535 nm (within the standard telecommunications wavelength window), allowing amplification over a wide wavelength range. To achieve gain in such short-length (cm scale) integrated devices, it is necessary to reach Er3+ concentrations of 1020-1021 cm-3 [1]. However, when the Er3+ concentration increases, energy transfer processes such as energy migration and energy-transfer upconversion (ETU) can decrease the performance of Er-doped devices, thus limiting the useful level of Er doping. Hence it is important to obtain a good understanding of these effects. Theory In a macroscopic treatment, the effect of ETU in the rate equations for population dynamics is expressed by a term Wn2, where W is the time-independent but Er3+-concentration-dependent upconversion parameter and n is the concentration of excited ions. However, this approach is valid only in the “kinetic limit” of the migration-accelerated regime of ETU. In order to describe our experimental results correctly, we need to include the static regime, in which energy migration is low. Hence a microscopic treatment is required. A comprehensive approach that takes into account both energy migration and ETU individually has been developed by Zubenko et al. [2]. We adapted this model to describe properly the population dynamics in Al2O3:Er3+. The equation for luminescent decay from the 4I13/2 first excited level of Er3+ reads: ( )⎪⎭⎪⎬⎫⎪⎩⎪⎨⎧⎟⎟⎠⎞⎜⎜⎝⎛−−⎟⎟⎠⎞⎜⎜⎝⎛⎟⎟⎠⎞⎜⎜⎝⎛+++−=00002 )/exp(1113)0(1)/exp()0()(ττττττττπτterftterfCntntnDDDDDAD , (1) where n(t = 0) = n(0) is the initial excitation density of the 4I13/2 level, τD is its intrinsic lifetime, CDA is the microparameter for the ETU process from 4I13/2, and τ0 is the mean time of a migration hop of excitation energy in the 4I13/2 level. Experiment and Results 1-μm-thick Er3+-doped Al2O3 slab waveguides were reactively co-sputtered on thermally oxidized Si <100> substrates [3]. Approximately 4-cm-long channel waveguides were then etched to a depth ≤ 50 nm with a width of 4 μm [4]. Luminescence decay measurements were performed on eight different Er3+-doped samples, with Er3+ concentrations ranging from 0.27 to 4.22 × 1020 cm-3. The samples were excited with 976-nm pump light from a diode laser modulated by an external square-pulse generator. The pulse had a duration of 40 ms, allowing the populations of the Er3+ system to reach a steady state before the pump was switched off (at t = 0). The modulated pump light was coupled into the waveguide with an optical fiber and the luminescence was collected using a high N.A. liquid fiber mounted normal to the sample surface. The luminescence was then diffracted by a monochromator and detected by an InGaAs photodiode. The resulting signal was acquired with a digital oscilloscope. The decay curves for four different Er3+ concentrations are shown in Fig. 1(a) along with the fit from Eq. 1. They show an increasingly fast non-exponential initial component induced by ETU, while at long delay times we observe an exponential tail which exhibits an asymptotic decay time. Its value is reported in the inset of Fig. 1(a). The intrinsic lifetime τD of the 4I13/2 level was measured in the sample with the lowest dopant concentration and had a value of 7.5 ms. n(0) was calculated by a rate-equation simulation of the Er3+ energy-level system, hence CDA and τ0 were the only free parameters of the fit. The result for CDA is (6.25 ± 0.15) × 10-41 cm6/s, while the results for τ0 are shown in Fig. 1(b). As expected, τ0 decreases from 65 ms down to 1 ms when the Er3+ concentration increases: the ions become closer and closer, the energy migration increases, hence the migration time becomes shorter. For the four samples with the lowest Er3+ concentration, τ0 > τD, i.e. according to Ref. [2] we are in the static regime of ETU, while for the samples with the highest Er3+ concentration, τ0 < τD, hence we are approaching the migration-accelerated regime. Fig. 1. (a) Luminescence decay curves (black dots) along with the fits (red lines) for different Er3+ concentrations and (b) the results for the migration time τ0 (dots) as a function of Er3+ concentration. The intrinsic lifetime τD is also shown for comparison (red line). Conclusions Luminescence decay measurements have been performed in Al2O3:Er3+ channel waveguides for different Er3+ concentrations. The upconversion microparameter CDA and the migration mean time τ0 have been evaluated and will be used in on-going amplifier simulations. References [1] A. Polman, “Erbium implanted thin film photonic materials”, J. Appl. Phys. 82, 1 (1997). [2] D.A. Zubenko, M.A. Noginov, V.A. Smirnov, and I.A. Shcherbakov, “Different mechanisms of nonlinear quenching of luminescence”, Phys. Rev. B 55, 8881-8886 (1997). [3] K. Wörhoff, F. Ay, and M. Pollnau, “Optimization of low-loss Al2O3 waveguide fabrication for application in active integrated optical devices”, ECS Transactios 3, 17-26 (2006). [4] J.D.B. Bradley, F. Ay, K. Wörhoff, and M. Pollnau, “Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching”, Appl. Phys. B 89, 311-318 (2007). 0 5 10 15 20 25-4-3-2-10 1) 0.27 x 1020 cm-3 -> τ=7.5 ms2) 1.17 x 1020 cm-3 -> τ=7.5 ms3) 2.91 x 1020 cm-3 -> τ=6.6 ms4) 4.22 x 1020 cm-3 -> τ=6.2 mstime (ms)ln Intensity1, 2340.11101000.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.50.1110100τ D (ms)τ 0 (ms)Er concentration (1020 cm-3)(a (b

Upconversion spectroscopy of Al2O3:Er3+

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Upconversion spectroscopy of Al<sub>2</sub>O<sub>3</sub>:Er<sup>3+</sup>

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