A Physical Model for Drain Noise in High Electron Mobility Transistors: Theory and Experiment

Abstract

We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic GaAs high electron mobility transistors (HEMTs) at 40 K and 300 K over a range of drain-source voltages ($V_{DS}$). From these data, we extract a small-signal model and the drain noise temperature ($T_{d}$) at each bias and temperature. We find that $T_d$ follows a superlinear trend with $V_{DS}$ at both temperatures. These trends are interpreted by attributing drain noise to a thermal component associated with the channel resistance and a component due to real-space transfer (RST) of electrons from the channel to the barrier [1]. In the present devices at the minimum $T_{50}$, RST contributes $\sim 10$% of the drain noise at cryogenic temperatures. At 300 K, the contribution increases to over $\sim 60$% of the total drain noise. This finding indicates that improving the confinement of electrons in the quantum well could enable room-temperature receivers with up to $\sim 50$% lower noise temperatures by decreasing the contribution of RST to drain noise.Comment: 6 pages, 6 figure