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Study of Peeling of Single Crystal Silicon by Intense Pulsed Ion Beam

Abstract

The surface peeling process induced by intense pulsed ion beam (IPIB) irradiation was studied. Single crystal silicon specimens were treated by IPIB with accelerating voltage of 350 kV current density of 130 A/cm2. It is observed that under smaller numbers of IPIB shots, the surface may undergo obvious melting and evaporation..

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