Extreme Ultraviolet Lithography (EUVL) has emerged as one of the leading successors to optics for 0.1 {micro}m IC fabrication. Its strongest attribute is the potential to scale to much finer resolution at high throughput. As such, this technique could meet the lithography needs for Si ULSI down to fundamental device limits. In the US, Lawrence Livermore, Sandia, and Lawrence Berkeley National Laboratories are participating in an industry funded research effort to evolve EUV technology and build a prototype camera for lithographic exposure. More recently, both Europe and Japan have initiated government/industry sponsored programs in EUVL development. This talk will focus on our program successes to date, and highlight some of the challenges that still lie ahead
