In situ observation of defect growth beyond the irradiated region in yttria-stabilized zirconia induced by 400 keV xenon ion-beam at -90 and 30{degrees}C
Single crystals of yttria-stabilized zirconia were irradiated with 400 keV Xe ion-beam at room temperature and minus 90 degrees centigrade. Defect growth was monitored in situ with Rutherford Backscattering and ion channeling techniques using a 2 MeV He ion beam
