ESTIMATION OF EXCITATION DENSTITY OF REPORTED TWO-PHOTON PHOTOLUMINESCENCE INTENSITY DISTRIBUTIONS AT A DISLOCATION IN AN n-GaN LAYER ON A M-3D SUBSTRATE
We estimated the excitation density of the reported two-photon photoluminescence from an n-GaN layer on an M-3D substrate by fitting the intensity distributions at a dislocation. We found that all the data points of the intensity distributions were reproduced with the effective dislocation radius of 8 nm. Considering the range of the excess hole concentration (Δp) within which almost all data points fell, we estimated Δp to be 10^16±1 cm^−3
