Crosstalk propagation through silicon substrate is
a serious limiting factor on the performance of the RF devices
and circuits. In this work, substrate crosstalk into high resistivity
silicon substrate is experimentally analyzed and the
impact on the RF behavior of silicon-on-insulator (SOI) MOS
transistors is discussed. The injection of a 10 V peak-to-peak
single tone noise signal at a frequency of 3 MHz ( fnoise) generates
two sideband tones of *−56 dBm separated by fnoise from
the RF output signal of a partially depleted SOI MOSFET
at 1 GHz and 4.1 dBm. The efficiency of the introduction
of a trap-rich polysilicon layer located underneath the buried
oxide (BOX) of the high resistivity (HR) SOI wafer in the
reduction of the sideband noise tones is demonstrated. An
equivalent circuit to model and analyze the generation of these
sideband noise tones is proposed
