Indium tin oxide (ITO) thin films for use as cathode electrodes in top-emitting organic light-emitting diodes (TOLEDs) were prepared by a facing targets sputtering (FTS) system under different sputtering conditions, which were varying oxygen gas flow rate, input current at room temperature on glass slide substrates. Then a function of sputtering conditions, the electrical and optical properties of prepared ITO thin films was evaluated. In the results, with increasing oxygen gas flow rate 0.1 sccm to 0.7 sccm, resistivities of ITO thin films increased with a decrease in carrier concentration, with an oxygen gas flow rate above 0.3 sccm. Transmittance of prepared ITO thin films was improved at increasing oxygen gas flow rate 0.1 sccm to 0.7 sccm. And transmittance of all of the prepared ITO thin films was over 80%. We could obtain resistivity 6.19×1
