11,014 research outputs found

    Stacking-order dependent transport properties of trilayer graphene

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    We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of \nu = 2, 4, 6... with a step of \Delta \nu = 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at \nu = 6 and 10 with 4-fold spin and valley degeneracy.Comment: 4 pages, 4 figure

    Localized magnetic states in biased bilayer and trilayer graphene

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    We study the localized magnetic states of impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene presents the mixing features of Dirac and conventional fermion. For zero gate bias, as the impurity energy approaches the Dirac point, the impurity magnetization region diminishes for bilayer and trilayer graphene. When a gate bias is applied, the dependence of impurity magnetic states on the impurity energy exhibits a different behavior for bilayer and trilayer graphene due to the opening of a gap between the valence and the conduction band in the bilayer graphene with the gate bias applied. The magnetic moment and the corresponding magnetic transition of the impurity in bilayer graphene are also investigated.Comment: 16 pages,6 figure

    Unbalanced edge modes and topological phase transition in gated trilayer graphene

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    Gapless edge modes hosted by chirally-stacked trilayer graphene display unique features when a bulk gap is opened by applying an interlayer potential difference. We show that trilayer graphene with half-integer valley Hall conductivity leads to unbalanced edge modes at opposite zigzag boundaries, resulting in a natural valley current polarizer. This unusual characteristic is preserved in the presence of Rashba spin-orbit coupling that turns a gated trilayer graphene into a Z2{Z}_2 topological insulator with an odd number of helical edge mode pairs.Comment: 5 pages, 4 figure

    Disorder induced field effect transistor in bilayer and trilayer graphene

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    We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only one of the graphene layers. This effect is based on the bias voltage's ability to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene, and gapped bilayer graphene.Comment: 21 pages, 7 figure

    Plasmons and their interaction with electrons in trilayer graphene

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    The interaction between electrons and plasmons in trilayer graphene is investigated within the Overhauser approach resulting in the 'plasmaron' quasi-particle. This interaction is cast into a field theoretical problem, nd its effect on the energy spectrum is calculated using improved Wigner-Brillouin perturbation theory. The plasmaron spectrum is shifted with respect to the bare electron spectrum by ΔE(k)50÷200meV\Delta E(\mathbf{k})\sim 50\div200\,{\rm meV} for ABC stacked trilayer graphene and for ABA trilayer graphene by ΔE(k)30÷150meV\Delta E(\mathbf{k})\sim 30\div150\,{\rm meV} (ΔE(k)1÷5meV\Delta E(\mathbf{k})\sim 1\div5\,{\rm meV}) for the hyperbolic linear) part of the spectrum. The shift in general increases with the electron concentration nen_{e} and electron momentum. The dispersion of plasmarons is more pronounced in \textit{ABC} stacked than in ABA tacked trilayer graphene, because of the different energy band structure and their different plasmon dispersion.Comment: arXiv admin note: substantial text overlap with arXiv:1310.623