Insulator interface effects in sputter‐deposited NbN/MgO/NbN (superconductor–insulator–superconductor) tunnel junctions

All refractory, NbN/MgO/NbN (superconductor–insulator–superconductor) tunnel junctions have been fabricated by in situ sputter deposition. The influence of MgO thickness (0.8–6.0 nm) deposited under different sputtering ambients at various deposition rates on current–voltage (I–V) characteristics of small‐area (30×30 μm) tunnel junctions is studied. The NbN/MgO/NbN trilayer is deposited in situ by dc reactive magnetron (NbN), and rf magnetron (MgO) sputtering, followed by thermal evaporation of a protective Au cap. Subsequent photolithography, reactive ion etching, planarization, and top contact (Pb/Ag) deposition completes the junction structure. Normal resistance of the junctions with MgO deposited in Ar or Ar and N2 mixture shows good exponential dependence on the MgO thickness indicating formation of a pin‐hole‐free uniform barrier layer. Further, a postdeposition in situ oxygen plasma treatment of the MgO layer increases the junction resistance sharply, and reduces the subgap leakage. A possible enrichment of the MgO layer stoichiometry by the oxygen plasma treatment is suggested. A sumgap as high as 5.7 mV is observed for such a junctio

The catalytic potential of high-k dielectrics for graphene formation

The growth of single and multilayer graphene nano-flakes on MgO and ZrO2 at low temperatures is shown through transmission electron microscopy. The graphene nano-flakes are ubiquitously anchored at step edges on MgO (100) surfaces. Density functional theory investigations on MgO (100) indicate C2H2 decomposition and carbon adsorption at step-edges. Hence, both the experimental and theoretical data highlight the importance of step sites for graphene growth on MgO

The oxidative coupling of methane and the oxidative dehydrogenation of ethane over a niobium promoted lithium doped magnesium oxide catalyst

The promoting effect of niobium in a Li/MgO catalyst for the oxidative coupling of methane (OCM) and for the oxidative dehydrogenation of ethane (ODHE) has been studied in some detail. It has been found that a Li/Nb/MgO catalyst with 16 wt % niobium showed the highest activity for the C2 production in the OCM reaction; the activity at 600 °C was ten times that of the Li/MgO catalyst at the same temperature. The Li/Nb/MgO catalyst was also slightly more active for the ODHE reaction than was the Li/MgO catalyst. However, the Li/Nb/MgO catalyst produced considerably more carbon dioxide in the both reactions. Structural investigation of the catalyst showed that the addition of niobium to the Li/MgO catalyst increased the surface area and gave an increase in the lithium content of the calcined catalysts. Two niobium phases, LiNbO3 and Li3NbO4, were formed; it is shown that the first of these probably causes the increased activity. Ageing experiments showed that the activity of the catalyst was lost if the catalyst was used above 720 °C, the melting point of the lithium carbonate phase. The catalyst showed a decrease of surface area after ageing and a sharp decrease of the amount of the two niobium phases. The addition of carbon dioxide to the feed could not prevent the deactivation of the Li/Nb/MgO catalyst

Role of MgO impurity on the superconducting properties of MgB2

We address the effect of MgO impurity on the superconducting properties of MgB2. The synthesis of MgB2 is very crucial because of sensitivity of Mg to oxidation which may lead to MgO as a secondary phase. Rietveld refinement was performed to determine the quantitative volume fraction of MgO in the samples synthesized by two different techniques. Both the samples were subjected to magnetization measurements under dc and ac applied magnetic fields and the observed results were compared as a function of temperature. Paramagnetic Meissner effect has been observed in a sample of MgB2 having more amount of MgO (with Tc = 37.1K) whereas the pure sample MgB2 having minor quantity of MgO shows diamagnetic Meissner effect with Tc = 38.8K. M-H measurements at 10K reveal a slight difference in irreversibility field which is due to MgO impurity along with wide transition observed from ac magnetic susceptibility measurements. The magnetotransport measurements R(T)H using RN = 90%, 50% and 10% criterion on pure sample of MgB2 has been used to determine the upper critical field whereas the sample having large quantity of MgO does not allow these measurements due to its high resistance.Comment: 15 pages text + Fig

Electrical spin injection in p-type Si using Fe/MgO contacts

We report the successful electrical creation of spin polarization in p-type Si at room temperature by using an epitaxial MgO(001) tunnel barrier and Fe(001) electrode. Reflection high-energy electron diffraction observations revealed that epitaxial Fe/MgO(001) tunnel contacts can be grown on a (2 x 1) reconstructed Si surface whereas tunnel contacts grown on the (1 x 1) Si surface were polycrystalline. Transmission electron microscopy images showed a more flat interface for the epitaxial Fe/MgO/Si compared to that of the polycrystalline structure. For the Fe/MgO/p-Si devices, the Hanle and inverted Hanle effects were clearly observed at 300 K by using a three-terminal configuration, proving that spin polarization can be induced in the Si at room temperature. Effective spin lifetimes deduced from the width of the Hanle curve were 95 +/- 6 ps and 143 +/- 10 ps for the samples with polycrystalline and epitaxial MgO tunnel contacts, respectively. The observed difference can be qualitatively explained by the local magnetic field induced by the larger roughness of the interface of the polycrystalline sample. The sample with epitaxial Fe/MgO tunnel contact showed higher magnitude of the spin accumulation with a nearly symmetric behavior with respect to the bias polarity whereas that of the polycrystalline MgO sample exhibited a quite asymmetric evolution. This might be attributed to the higher degree of spin polarization of the epitaxial Fe/MgO(001) tunnel contact, which acts as a spin filter. Our experimental results suggest that an epitaxial MgO barrier is beneficial for creating spins in Si.Comment: Paper presented at SPIE Nanoscience + Engineering, Spintronics V session in San Diego, US on August 13th, 201

The effect of Nb2O5 and ZrO2 additions on the behaviour of Li/MgO and Li/Na/MgO catalysts for the oxidative coupling of methane

Incorporation of Nb2O5 or ZrO2 into both Li/MgO and Li/Na/MgO systems produced ternary and quaternary catalysts, respectively, capable of attaining optimal C2 yields and selectivities at lower temperatures relative to the unpromoted materials. The degree of enhancement effected by these metal oxide additives was compared to that produced by Li/MgO and Li/Na/MgO catalysts promoted with SnO2 or Co3O4. At reaction temperatures < 700°C, the Li/Co/MgO ternary system showed marked differences in behaviour compared to the other ternary catalysts tested. This was particularly evident in the variation in C2 selectivity with time on stream during ageing studies of (i) untreated materials, (ii) materials pretreated in CO2, and (iii) materials dosed periodically with CHCI3