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Relaxation behavior of undoped InxGa1âxP 0.5<x<0.7 grown on GaAs by atomic layer molecularâbeam epitaxy
6 pĂĄginas, 5 figuras, 2 tablas.We present a study of the relaxation behavior of compressive InxGa1âxP layers grown by atomic layer molecularâbeam epitaxy at Ts=420â°C with x=56%±3% and x=67%±3%. Similar (thickness and composition) InxGa1âxP layers were grown under different growth conditions in order to assess the influence of the stoichiometry of the growth front on the structural properties and the relaxation process of this material system. All InxGa1âxP layers were characterized by doubleâcrystal xâray diffraction, transmission electron microscopy, and Nomarski interference. Our results show that surface stoichiometry during growth does not affect the relaxation behavior of InxGa1âxP layers but strongly determines their structural characteristics related to composition modulation features which appear in all our InxGa1âxP layers. We have established an empirical relation between residual strain and thickness. This relation makes predictable the residual strain of more complicated structures which can be introduced as buffer layers in latticeâmismatched heteroepitaxial systems.The authors wish to acknowledge to the European Community
for financial support under ESPRIT Project No. BLES-6854.Peer reviewe