Electronic states in arsenic-decapped MnAs (1100) films grown on GaAs(001): A photoemission spectroscopy study

3 pages, 2 figures.We examine the arsenic bonding in the near-surface region of initially arsenic-capped MnAs(1100) films grown on GaAs(001) as it evolves upon arsenic decapping. Line-shape analyses of high-resolution As 3d photoelectron emission spectra recorded at room temperature RT allow us to identify electronically distinct As-bonding states associated to bulk MnAs phases, bulk arsenic, and interfacial environments. Stable MnAs phases appear to be affected by the presence of a thin arsenic coating, an effect that could be advantageously used to enhance the ferromagnetic properties of MnAs films around RTWe thank the BESSY staff for support. This work has been supported by the Spanish Ministry of Education and Science (“Ramón y Cajal” and “Materials” Programs, 2005 call and MAT2004-05348 Grant, respectively) and by the German Federal Ministry for Education and Research.Peer reviewe

Electronic states in arsenic-decapped MnAs (1100) films grown on GaAs(001): A photoemission spectroscopy study

3 pages, 2 figures.We examine the arsenic bonding in the near-surface region of initially arsenic-capped MnAs(1100) films grown on GaAs(001) as it evolves upon arsenic decapping. Line-shape analyses of high-resolution As 3d photoelectron emission spectra recorded at room temperature RT allow us to identify electronically distinct As-bonding states associated to bulk MnAs phases, bulk arsenic, and interfacial environments. Stable MnAs phases appear to be affected by the presence of a thin arsenic coating, an effect that could be advantageously used to enhance the ferromagnetic properties of MnAs films around RTWe thank the BESSY staff for support. This work has been supported by the Spanish Ministry of Education and Science (“Ramón y Cajal” and “Materials” Programs, 2005 call and MAT2004-05348 Grant, respectively) and by the German Federal Ministry for Education and Research.Peer reviewe