Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy

5 pages, 7 figures.SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room temperature ranged between 2.0×1016 cm−3 and 5.6×1018 cm−3 with the corresponding Hall mobility varying from 2320 to 1042 cm2/V s.The authors would like to thank Dr. A. J. Springthorpe, from Nortel Networks, for SIMS measurements, and the Spanish CICYT for financially supporting this research under Contract No. TIC-99-0645-C05-05.Peer reviewe