Gallium self-diffusion in gallium phosphide

Ga self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of 69Ga and 71Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy (MBE) on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D=2.0 cm2 s−1 exp(−4.5 eV/kBT) between 1000 and 1190 °C under phosphorus-rich condition. The self-diffusion entropy is found to be ∼4 kB.This work is supported in part by the U.S. NSF Grant DMR-94 11763 and in part by the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences Division of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098. íéŸ åPeer reviewe