Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties

We report a joint experimental and theoretical study on the electronic structure and the solid-state organisation of bis(naphthoquinone)- tetrathiafulvalene (BNQ-TTF) as a promising ambipolar semiconductor. Accordingly, organic field-effect transistors (OFETs) fabricated with this material show both hole and electron transport for the first time in TTF derivatives. © The Royal Society of Chemistry 2011.We thank the funding from the European Community's Framework Programme (FP7/2007-2013) under grant agreement no. 212311 of the ONE-P project, Marie Curie EST FuMASSEC, DGI, Spain (projects CTQ2006-06333/BQU, CTQ2010-195011/BQU, and HOPE Consolider 2010 CSD2007-00007), the Generalitat de Catalunya (2009SGR00516), the program “Juan de la Cierva” (MICINN) and the CIBER de Bioingeniera, Biomateriales y Nanomedicina (CIBER-BBN), promoted by ISCIII, Spain. We also thank CESGA for the use of their computational resources. The work in Mons is also supported by the Belgian National Fund for Scientific Research (FNRS). Y.O. and J.C. are FNRS research fellows. This research used resources of the Interuniversity Scientific Computing Facility located at the University of Namur, Belgium, which is supported by the F.R.S.-FNRS under Convention No. 2.4617.07.Peer Reviewe

Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties

We report a joint experimental and theoretical study on the electronic structure and the solid-state organisation of bis(naphthoquinone)-tetrathiafulvalene (BNQ-TTF) as a promising ambipolar semiconductor. Accordingly, organic field-effect transistors (OFETs) fabricated with this material show both hole and electron transport for the first time in TTF derivatives.Peer ReviewedPostprint (published version