Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.Comment: Keywords: silicon detectors, avalanche multiplication, timing detectors, tracking detectors. 8 pages. 8 Figure

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

Proceeding of the 10th International “Hiroshima” Symposium on the Development and Application of Semiconductor Tracking Detectors.-- et al.This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n–p–p structure, where the doping profile of the p layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.This work was developed in the framework of the CERN RD50 collaboration and financed by the Spanish Ministry of Economy and Competitiveness through the Particle Physics National Program (FPA2013-48308-C2-2-P, FPA2014-55295-C3-2-R and FPA2013-48387-C6-1-P). This project has received funding from the European Union's Horizon 2020 Research and Innovation program under Grant Agreement no. 654168 (AIDA-2020).Open Access funded by CERN.Peer Reviewe