Linear Bandits with Feature Feedback

This paper explores a new form of the linear bandit problem in which the algorithm receives the usual stochastic rewards as well as stochastic feedback about which features are relevant to the rewards, the latter feedback being the novel aspect. The focus of this paper is the development of new theory and algorithms for linear bandits with feature feedback. We show that linear bandits with feature feedback can achieve regret over time horizon $T$ that scales like $k\sqrt{T}$, without prior knowledge of which features are relevant nor the number $k$ of relevant features. In comparison, the regret of traditional linear bandits is $d\sqrt{T}$, where $d$ is the total number of (relevant and irrelevant) features, so the improvement can be dramatic if $k\ll d$. The computational complexity of the new algorithm is proportional to $k$ rather than $d$, making it much more suitable for real-world applications compared to traditional linear bandits. We demonstrate the performance of the new algorithm with synthetic and real human-labeled data

Pacemaker endocarditis due to Haemophilus parainfluenza : case report and literature review

This article reports a case of pacemaker infective endocarditis in a 14 month old girl, caused by Haemophilus parainfluenzae. There are no other cases in children reported in the literature. The issues surrounding the case and the evidence which influenced the management are discussedpeer-reviewe

Investigation of different dielectric materials as gate insulator for MOSFETs

The scaling of semiconductor transistors has led to a decrease in thickness of the silicon dioxide layer used as gate dielectric. The thickness of the silicon dioxide layer is reduced to increase the gate capacitance, thus increasing the drain current. If the thickness of the gate dielectric decreases below 2nm, the leakage current due to the tunneling increases drastically. Hence it is necessary to replace the gate dielectric, silicon dioxide, with a physically thicker oxide layer of high-k materials like Hafnium oxide and Titanium oxide. High-k dielectric materials allow the capacitance to increase without a huge leakage current. Hafnium oxide and Titanium oxide films are deposited by reactive magnetron sputtering from Hafnium and Titanium targets respectively. These oxide layers are used to create metal-insulator-metal (MIM) structures using aluminum as the top and bottom electrodes. The films are deposited at various O2/Ar gas flow ratios, substrate temperatures, and process pressures. After attaining an exact recipe for these oxide layers that exhibit the desired parameters, MOS capacitors are fabricated with n-Si and p-Si substrates having aluminum electrodes at the top and bottom of each. Comparing the parameters of Hafnium oxide- and Titanium oxide- based MOS capacitors, MOSFET devices are designed with Hafnium oxide as gate dielectric

Bridge of Spies: Soft Power & Espionage in Eastern Europe

The Texas Orato

A non-archimedean definable Chow theorem

Peterzil and Starchenko have proved the following surprising generalization of Chow's theorem: A closed analytic subset of a complex algebraic variety that is definable in an o-minimal structure, is in fact an algebraic subset. In this paper, we prove a non-archimedean analogue of this result.Comment: 30 pages. Comments are welcome

Khashoggi Murder

The Texas Orato

Ideas — The American Century

The Texas Orato