3 research outputs found

    InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE

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    This work demonstrates the first true blue laser diodes (LDs) grown by plasma assisted molecular beam epitaxy that operate at the region of 450-460 nm. The single quantum well LDs were grown on several types of c-plane bulk GaN substrates, with threading dislocation densities varying from 10 4 to 10 8cm -2. The key factors that allowed the authors to achieve lasing in true-blue wavelengths are improvements in the growth technology of the InGaN quantum wells attributed to the high nitrogen flux used and the design of the LD structure, which reduced the light losses in the cavity. The authors discuss the influence of the diodes' design on the parameters of LDs. \ua9 2012 American Vacuum Society.Peer reviewed: YesNRC publication: Ye

    AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy

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    Room-temperature continuous wave lasing at 432nm with a threshold current of 7.6 kA/cm2 for nitride-based laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy is reported. The diodes were grown on c-plane GaN substrates with a threading dislocation density of 5 7 107 cm -2. We used a simplified laser structure design with GaN claddings where the optical modes were confined by the thick 120nm In 0:08Ga 0:92N waveguide. Our LDs show a high optical output power of 130mW, a differential gain of 0.5 W/A, and a lifetime of 50 h. \ua9 2012 The Japan Society of Applied Physics.Peer reviewed: YesNRC publication: Ye
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