2 research outputs found

    Benchmarking of COBAYA3 pin-by-pin for VVER

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    This paper presents results of the benchmarking of COBAYA3 pin-by-pin for VVER-1000 obtained in the frame of the EU NURISP project. The 3D lattice solver in COBAYA3 uses transport corrected multi-group diffusion approximation with side-dependent interface discontinuity factors of GET or Selengut Black Box type. The objective of this study is to test the few-group calculation scheme when using structur ed and unstructured spatial meshes. Unstructured mesh is necessary to model the water gaps between the hexagonal assemblies. The benchmark problems include pin-by-pin calculations of 2D subsets of the core and comparison with APOLLO2 and TR IPOLI4 transport reference solutions. COBAYA3 solutions in 2, 4 and 8 energy groups have been tested. The results show excellent agreement with the reference on es when using side-dependent interface discontinuity factors

    Benchmarking of calculation schemes in Apollo2 and COBAYA3 for VVER lattices

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    This paper presents solutions of the NURISP VVER lattice benchmark using APOLLO2, TRIPOLI4 and COBAYA3 pin-by-pin. The main objective is to validate MOC based calculation schemes for pin-by-pin cross-section generation with APOLLO2 against TRIPOLI4 reference results. A specific objective is to test the APOLLO2 generated cross-sections and interface discontinuity factors in COBAYA3 pin-by-pin calculations with unstructured mesh. The VVER-1000 core consists of large hexagonal assemblies with 2mm inter-assembly water gaps which require the use of unstructured meshes in the pin-by-pin core simulators. The considered 2D benchmark problems include 19-pin clusters, fuel assemblies and 7-assembly clusters. APOLLO2 calculation schemes with the step characteristic method (MOC) and the higher-order Linear Surface MOC have been tested. The comparison of APOLLO2 vs.TRIPOLI4 results shows a very close agreement. The 3D lattice solver in COBAYA3 uses transport corrected multi-group diffusion approximation with interface discontinuity factors of GET or Black Box Homogenization type. The COBAYA3 pin-by-pin results in 2, 4 and 8 energy groups are close to the reference solutions when using side-dependent interface discontinuity factors
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