Growth and magnetic properties of multiferroic LaxBi1-xMnO3 thin films

A comparative study of LaxBi1-xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1-xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions

Obtención de láminas delgadas de Y-Ba-Cu-O sobre Si (100)

Se ha utilizado la evaporación secuencial de Cu, Y2O3 y BaF2 para la obtención de láminas delgadas superconductoras de YBa-CuO sobre substratos de Si monocristalino con orientación [100], recubiertos con una lámina barrera de Zr02. Se han estudiado los efectos de la variación de los espesores relativos de las láminas constituyentes y del espesor total de la lámina resultante. Las láminas se han caracterizado mediante medidas de la variación de la resistencia con la temperatura, microscopía electrónoca de barrido, difractometría de rayos X, microson-da electrónica y espectometría de masas de iones secundarios. Las láminas presentan un ligero carácter semiconductor en el estado normal, con temperaturas de inicio de la transición su-perconductora alrededor de 90 K, y resistencia nula, en el mejor de los casos, a 45 K

Characterization of hydroxyapatite laser ablation plumes by fast intensified CCD-imaging

ArF excimer laser pulses (193 nm, 20 ns, 150 mJ) have been focused on a hydroxyapatite (HA) target in similar conditions to those normally used for thin film deposition. Fast intensified CCD images of HA laser ablation plumes have been taken in vacuum and under different water vapor pressures ranging from 0.01 mbar to 1 mbar. Images of HA ablation in vacuum have shown a plume freely expanding at a constant velocity of 2.3 106 cm/s. HA ablation under a water vapor pressure of 0.01 mbar has revealed an expansion behavior very similar to that of ablation in vacuum. Images taken under a water vapor pressure of 0.1 mbar have shown the formation of a shock structure in the plume. Finally, HA ablation under a water vapor pressure of 1 mbar has revealed the development of some irregularities in the shape of the plume

Epitaxial growth of SrTiO3 films on cube-textured Cu-clad substrates by PLD at low temperature under reducing atmosphere

The growth of epitaxial {001} SrTiO3 (STO) on low-cost cube-textured Cu-based clad substrate at low temperature was carried out by means of pulsed laser deposition (PLD). STO film was deposited in one step under a reducing atmosphere (5% H2 and 95% Ar mixture) to prevent the oxidation of the metal surface. The optimization of PLD parameters leads to a sharpest biaxial texture at a temperature as low as 500 °C and a thickness of 500 nm with a (100) STO layer. The upper limit of highly textured STO thickness was also investigated. The maximum thickness which retains the best quality {001} texture is 800 nm, since the texture is preserved not only through the layer but also on the surface. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements showed that STO films are continuous, dense, and smooth with very low roughness (between 5 and 7 nm). This paper describes the development of STO layer by means of PLD in absence of oxygen throughout the process, suggesting an alternative and effective method for growing highly {001} textured STO layer on low-cost metal substrates

Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Orthorhombic YMnO3epitaxialthin films were grown on Nb(0.5%)-doped SrTiO3(001) substrates. Film's thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more distorted. Dielectric properties were investigated as a function of the temperature and magnetic field. The dielectric peak occurring at temperatures below the antiferromagnetic ordering is proved to be magnetoelectric and its amplitude is dependent on the unit cell distortion. These findings allow tailoring ferromagnetic and magnetoelectric properties via epitaxial strain

Electric field control of exchange bias in multiferroic epitaxial heterostructures

The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an appropriate electric field allows modifying and controlling the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to pave the way towards a new generation of electric-field controlled spintronics devices.Comment: 15 pages, 5 figures, submitte

Emergence of ferromagnetism in antiferromagnetic TbMnO3 by epitaxial strain

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.We show that in oxide thin films of spiral antiferromagnetic orthorhombic TbMnO3, ferromagnetism emerges resulting from epitaxially induced strain. The unit cell volume can be tuned (contracting up to a 2%) by varying thickness and deposition conditions; it is found that the ferromagnetic response correlates with the unit cell deformation. Such effect of strain on the magnetic properties turns out to be similar to that occurring in collinear orthorhombic antiferromagnets such as YMnO3. Owing to the intimate relationship between magnetic order and ferroelectricity in TbMnO3 these results may provide a new route to induce magnetoelectric coupling and tailor their ferroelectric response

Dielectric characterization of multiferroic magnetoelectric double-perovskite Y(Ni0.5Mn0.5)O3 thin films

We report on functional properties of Y(Ni0.5Mn0.5)O3 epitaxial thin films, growth by pulsed laser deposition, observing clear features of its ferroelectric and ferromagnetic nature at cryogenic temperature. Temperature-dependent complex impedance spectroscopy (IS) characterization has shown a dielectric anomaly around the ferromagnetic Curie temperature ( 100 K) indicative of coupling between magnetic and electric orders

High-temperature magnetodielectric Bi(Fe0.5Mn0.5)O3 thin films with checkerboard-ordered oxygen vacancies and low magnetic damping

The possibility of affecting the magnetic properties of a material by dielectric means, and vice versa, remains an attractive perspective for modern electronics and spintronics. Here, we report on epitaxial Bi(Fe0.5Mn0.5)O3 thin films with exceptionally low Gilbert damping and magnetoelectric coupling above room temperature (<400 K). The ferromagnetic order, not observed in bulk, has been detected with a total magnetization of 0.44 μB/formula units with low Gilbert damping parameter (0.0034), both at room temperature. Additionally, a previously overlooked check-board ordering of oxygen vacancies is observed, providing insights on the magnetic and dielectric origin of the multifunctional properties of the films. Finally, intrinsic magnetodielectric behavior is observed as revealed by the variation of dielectric permittivity well above room temperature. These findings show the possibility of electric-field-controlled magnetic properties, in low Gilbert-damping-based spintronic devices, using single-phase multiferroic material

Kerr measurements on single-domain SrRuO3 thin films

We report on the magneto-optical measurements of an epitaxial SrRuO3 film grown on SrTiO3 (0 0 1), which previously was determined to be single domain orientated by x-ray diffraction and Raman spectroscopy techniques. Our experiments reveal a large Kerr rotation, which reaches a maximum value of about 0.5° at low temperature. By measuring magnetic hysteresis loops at different temperatures, we determined the temperature dependence of the Kerr rotation in the polar configuration. Values of the anisotropic magnetoresistance ~ 20% have been measured. These values are remarkably higher than those of other metallic oxides such as manganites. This striking difference can be attributed to the strong spin-orbit interaction of the Ru 4d ion in the SrRuO3 compound