442 research outputs found
Disorder mediated splitting of the cyclotron resonance in two-dimensional electron systems
We perform a direct study of the magnitude of the anomalous splitting in the
cyclotron resonance (CR) of a two-dimensional electron system (2DES) as a
function of sample disorder. In a series of AlGaAs/GaAs quantum wells,
identical except for a range of carbon doping in the well, we find the CR
splitting to vanish at high sample mobilities but to increase dramatically with
increasing impurity density and electron scattering rates. This observation
lends strong support to the conjecture that the non-zero wavevector, roton-like
minimum in the dispersion of 2D magnetoplasmons comes into resonance with the
CR, with the two modes being coupled via disorder.Comment: accepted to PRB Rapid Com
Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions
Considering scattering by unintentional background charged impurities and by
charged dopants in the modulation doping layer as well as by GaAs acoustic
phonons, we theoretically consider the practical intrinsic (phonons) and
extrinsic (background and dopants) limits to carrier mobility in modulation
doped AlGaAs-GaAs 2D semiconductor structures. We find that reducing background
impurity density to cm along with a modulation doping
separation of 1000 \AA or above will achieve a mobility of
cm/Vs at a carrier density of cm for T=1K. At T=4
(10)K, however, the hard limit to the 2D mobility would be set by acoustic
phonon scattering with the maximum intrinsic mobility being no higher than 22
cm/Vs. Detailed numerical results are presented as a
function of carrier density, modulation doping distance, and temperature to
provide a quantitative guide to experimental efforts for achieving ultra-high
2D mobilities.Comment: 6 pages, 6 figure
Infrared spectroscopy of Landau levels in graphene
We report infrared studies of the Landau level (LL) transitions in single
layer graphene. Our specimens are density tunable and show \textit{in situ}
half-integer quantum Hall plateaus. Infrared transmission is measured in
magnetic fields up to B=18 T at selected LL fillings. Resonances between hole
LLs and electron LLs, as well as resonances between hole and electron LLs are
resolved. Their transition energies are proportional to and the
deduced band velocity is m/s. The lack of
precise scaling between different LL transitions indicates considerable
contributions of many-particle effects to the infrared transition energies.Comment: 4 pages, 3 figures, to appear in Phys. Rev. Let
Single-Walled Carbon Nanotubes as Shadow Masks for Nanogap Fabrication
We describe a technique for fabricating nanometer-scale gaps in Pt wires on
insulating substrates, using individual single-walled carbon nanotubes as
shadow masks during metal deposition. More than 80% of the devices display
current-voltage dependencies characteristic of direct electron tunneling. Fits
to the current-voltage data yield gap widths in the 0.8-2.3 nm range for these
devices, dimensions that are well suited for single-molecule transport
measurements
Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System
We determine the spin susceptibility in a two dimensional electron system in
GaAs/AlGaAs over a wide range of low densities from 2cm to
4cm. Our data can be fitted to an equation that describes
the density dependence as well as the polarization dependence of the spin
susceptibility. It can account for the anomalous g-factors reported recently in
GaAs electron and hole systems. The paramagnetic spin susceptibility increases
with decreasing density as expected from theoretical calculations.Comment: 5 pages, 2 eps figures, to appear in PR
Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression
Resistance, magnetoresistance and their temperature dependencies have been
investigated in the 2D hole gas at a [001] p-GaAs/AlGaAs
heterointerface under [110] uniaxial compression. Analysis performed in the
frame of hole-hole scattering between carriers in the two spin splitted
subbands of the ground heavy hole state indicates, that h-h scattering is
strongly suppressed by uniaxial compression. The decay time of the
relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3
kbar.Comment: 5 pages, 3 figures. submitted to Phys.Rev.
Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor
We report on the temperature dependence of the mobility, , of the
two-dimensional electron gas in a variable density AlGaN/GaN field effect
transistor, with carrier densities ranging from 0.4 cm to
3.0 cm and a peak mobility of 80,000 cm/Vs. Between
20 K and 50 K we observe a linear dependence T
indicating that acoustic phonon scattering dominates the temperature dependence
of the mobility, with being a monotonically increasing function of
decreasing 2D electron density. This behavior is contrary to predictions of
scattering in a degenerate electron gas, but consistent with calculations which
account for thermal broadening and the temperature dependence of the electron
screening. Our data imply a deformation potential D = 12-15 eV.Comment: 3 pages, 2 figures, RevTeX. Submitted to Appl Phys Let
Measurement of Scattering Rate and Minimum Conductivity in Graphene
The conductivity of graphene samples with various levels of disorder is
investigated for a set of specimens with mobility in the range of
cm/V sec. Comparing the experimental data with the
theoretical transport calculations based on charged impurity scattering, we
estimate that the impurity concentration in the samples varies from cm. In the low carrier density limit, the conductivity exhibits
values in the range of , which can be related to the residual
density induced by the inhomogeneous charge distribution in the samples. The
shape of the conductivity curves indicates that high mobility samples contain
some short range disorder whereas low mobility samples are dominated by long
range scatterers.Comment: 4 pages 4 figure
Interaction-induced shift of the cyclotron resonance of graphene using infrared spectroscopy
We report a study of the cyclotron resonance (CR) transitions to and from the
unusual Landau level (LL) in monolayer graphene. Unexpectedly, we find
the CR transition energy exhibits large (up to 10%) and non-monotonic shifts as
a function of the LL filling factor, with the energy being largest at
half-filling of the level. The magnitude of these shifts, and their
magnetic field dependence, suggests that an interaction-enhanced energy gap
opens in the level at high magnetic fields. Such interaction effects
normally have limited impact on the CR due to Kohn's theorem [W. Kohn, Phys.
Rev. {\bf 123}, 1242 (1961)], which does not apply in graphene as a consequence
of the underlying linear band structure.Comment: 4 pages, 4 figures. Version 2, edited for publication. Includes a
number of edits for clarity; also added a paragraph contrasting our work w/
previous CR expts. in 2D Si and GaA
- …