Dynamical Electron Mass in a Strong Magnetic Field

Motivated by recent interest in understanding properties of strongly magnetized matter, we study the dynamical electron mass generated through approximate chiral symmetry breaking in QED in a strong magnetic field. We reliably calculate the dynamical electron mass by numerically solving the nonperturbative Schwinger-Dyson equations in a consistent truncation within the lowest Landau level approximation. It is shown that the generation of dynamical electron mass in a strong magnetic field is significantly enhanced by the perturbative electron mass that explicitly breaks chiral symmetry in the absence of a magnetic field.Comment: 5 pages, 1 figure, published versio

The structure, energy, and electronic states of vacancies in Ge nanocrystals

The atomic structure, energy of formation, and electronic states of vacancies in H-passivated Ge nanocrystals are studied by density functional theory (DFT) methods. The competition between quantum self-purification and the free surface relaxations is investigated. The free surfaces of crystals smaller than 2 nm distort the Jahn-Teller relaxation and enhance the reconstruction bonds. This increases the energy splitting of the quantum states and reduces the energy of formation to as low as 1 eV per defect in the smallest nanocrystals. In crystals larger than 2 nm the observed symmetry of the Jahn-Teller distortion matches the symmetry expected for bulk Ge crystals. Near the nanocrystal's surface the vacancy is found to have an energy of formation no larger than 0.5 to 1.4 eV per defect, but a vacancy more than 0.7 nm inside the surface has an energy of formation that is the same as in bulk Ge. No evidence of the self-purification effect is observed; the dominant effect is the free surface relaxations, which allow for the enhanced reconstruction. From the evidence in this paper, it is predicted that for moderate sized Ge nanocrystals a vacancy inside the crystal will behave bulk-like and not interact strongly with the surface, except when it is within 0.7 nm of the surface.Comment: In Press at Phys. Rev.

Towards geometric control of max-plus linear systems with applications to manufacturing systems

The max-plus linear systems have been studied for almost three decades, however, a well-established system theory on such specific systems is still an on-going research. The geometric control theory in particular was proposed as the future direction for max-plus linear systems by Cohen et al. This paper reports upon recent investigations on the disturbance decoupling problem for max-plus linear systems, which is the standard geometric control problem originated by W. M. Wonham. Different concepts of the disturbance decoupling problem are introduced, as well as the corresponding solvability conditions and controller synthesis procedures. The main results can be used in manufacturing systems, queueing networks, and power system networks for fault detection and system breakdown prevention

Field-induced domain interpenetration in tetragonal ferroelectric crystal

Ferroelectric domain structures of a 〈001〉-oriented lead magnesium niobate–lead titanate tetragonal crystal were examined under cyclic bipolar electric fields. Complex patterns of orthogonal domain strips were found to emerge from a simple structure of parallel strips of 90°domains. Near the boundary between the two orthogonal sets of the domain strips, domains were forced to intersect, creating charged domain walls at the intersections. With continued electric cycling, direct impingement of individual domains resulted in domain interpenetration and fine domain cells in the boundary region. Away from the boundary region, initial domain walls were withdrawn and replaced by the walls along a different orientation, resulting in separate areas that each contained a single set of parallel strips of domains. A model based on 180° domain switching is suggested to explain interpenetration of the domains and the withdrawal of the original domain walls

Dependence of quantum correlations of twin beams on pump finesse of optical parametric oscillator

The dependence of quantum correlation of twin beams on the pump finesse of an optical parametric oscillator is studied with a semi-classical analysis. It is found that the phase-sum correlation of the output signal and idler beams from an optical parametric oscillator operating above threshold depends on the finesse of the pump field when the spurious pump phase noise generated inside the optical cavity and the excess noise of the input pump field are involved in the Langevin equations. The theoretical calculations can explain the previously experimental results, quantitatively.Comment: 27 pages, 8 figure

Electrical current-driven pinhole formation and insulator-metal transition in tunnel junctions

Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS effect is here studied in TJs with two thin (20 \AA) non-magnetic (NM) Ta electrodes inserted above and below the insulating barrier. We observe resistance (R) switching for positive applied electrical current (flowing from the bottom to the top lead), characterized by a continuous resistance decrease and associated with current-driven displacement of metallic ions from the bottom electrode into the barrier (thin barrier state). For negative currents, displaced ions return into their initial positions in the electrode and the electrical resistance gradually increases (thick barrier state). We measured the temperature (T) dependence of the electrical resistance of both thin- and thick-barrier states ($R_b$ and R$_B$ respectively). Experiments showed a weaker R(T) variation when the tunnel junction is in the $R_b$ state, associated with a smaller tunnel contribution. By applying large enough electrical currents we induced large irreversible R-decreases in the studied TJs, associated with barrier degradation. We then monitored the evolution of the R(T) dependence for different stages of barrier degradation. In particular, we observed a smooth transition from tunnel- to metallic-dominated transport. The initial degradation-stages are related to irreversible barrier thickness decreases (without the formation of pinholes). Only for later barrier degradation stages do we have the appearance of metallic paths between the two electrodes that, however, do not lead to metallic dominated transport for small enough pinhole radius.Comment: 10 pages, 3 figure