Resonant and inelastic Andreev tunneling observed on a carbon nanotube quantum dot

We report the observation of two fundamental sub-gap transport processes through a quantum dot (QD) with a superconducting contact. The device consists of a carbon nanotube contacted by a Nb superconducting and a normal metal contact. First, we find a single resonance with position, shape and amplitude consistent with the theoretically predicted resonant Andreev tunneling (AT) through a single QD level. Second, we observe a series of discrete replicas of resonant AT at a separation of $\sim145\,\mu$eV, with a gate, bias and temperature dependence characteristic for boson-assisted, inelastic AT, in which energy is exchanged between a bosonic bath and the electrons. The magnetic field dependence of the replica's amplitudes and energies suggest that two different bosons couple to the tunnel process.Comment: 5 pages + 9 pages supplementary materia

Andreev bound states probed in three-terminal quantum dots

We demonstrate several new electron transport phenomena mediated by Andreev bound states (ABSs) that form on three-terminal carbon nanotube (CNT) QDs, with one superconducting (S) contact in the center and two adjacent normal metal (N) contacts. Three-terminal spectroscopy allows us to identify the coupling to the N contacts as the origin of the Andreev resonance (AR) linewidths and to determine the critical coupling strengths to S, for which a ground state transition S-QD systems can occur. We ascribe replicas of the lowest-energy ABS resonance to transitions between the ABS and odd-parity excited QD states, a process called excited state ABS resonances. In the conductance between the two N contacts we find a characteristic pattern of positive and negative differential subgap conductance, which we explain by considering two nonlocal processes, the creation of Cooper pairs in S by electrons from both N terminals, and a novel mechanism called resonant ABS tunneling. In the latter, electrons are transferred via the ABS without creating Cooper pairs in S. The three-terminal geometry also allows spectroscopy experiments with different boundary conditions, for example by leaving S floating. Surprisingly, we find that, depending on the boundary conditions, the experiments either show single-particle Coulomb blockade resonances, ABS characteristics, or both in the same measurements, seemingly contradicting the notion of ABSs replacing the single particle states as eigenstates of the QD. We qualitatively explain these results as originating from the finite time scale required for the coherent oscillations between the superposition states after a single electron tunneling event. These experiments demonstrate that three-terminal experiments on a single complex quantum object can also be useful to investigate charge dynamics otherwise not accessible due to the very high frequencies.Comment: 15 pages, 16 figure

Gate-tunable split Kondo effect in a carbon nanotube quantum dot

We show a detailed investigation of the split Kondo effect in a carbon nanotube quantum dot with multiple gate electrodes. It is found that the splitting decreases for increasing magnetic field, to result in a recovered zero-bias Kondo resonance at finite magnetic field. Surprisingly, in the same charge state, but under different gate-configurations, the splitting does not disappear for any value of the magnetic field, but we observe an avoided crossing of two high-conductance lines. We think that our observations can be understood in terms of a two-impurity Kondo effect with two spins coupled antiferromagnetically. The exchange coupling between the two spins can be influenced by a local gate, and the non-recovery of the Kondo resonance for certain gate configurations is explained by the existence of a small antisymmetric contribution to the exchange interaction between the two spins.Comment: 12 pages, 4 figures, published versio

Electrical Spin Injection in Multi-Wall carbon NanoTubes with transparent ferromagnetic contacts

We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield of device resistances below 100 $k\Omega$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.Comment: submitted to APL version without figures version with figures available on http://www.unibas.ch/phys-meso

Fork stamping of pristine carbon nanotubes onto ferromagnetic contacts for spin-valve devices

We present a fabrication scheme called 'fork stamping' optimized for the dry transfer of individual pristine carbon nanotubes (CNTs) onto ferromagnetic contact electrodes fabricated by standard lithography. We demonstrate the detailed recipes for a residue-free device fabrication and in-situ current annealing on suspended CNT spin-valve devices with ferromagnetic Permalloy (Py) contacts and report preliminary transport characterization and magnetoresistance experiments at cryogenic temperatures. This scheme can directly be used to implement more complex device structures, including multiple gates or superconducting contacts.Comment: 7 pages, 4 figures, submitted to IWEPNM 2015 conference proceedings (physica status solidi (b)

Contact resistance dependence of crossed Andreev reflection

We show experimentally that in nanometer scaled superconductor/normal metal hybrid devices and in a small window of contact resistances, crossed Andreev reflection (CAR) can dominate the nonlocal transport for all energies below the superconducting gap. Besides CAR, elastic cotunneling (EC) and nonlocal charge imbalance (CI) can be identified as competing subgap transport mechanisms in temperature dependent four-terminal nonlocal measurements. We demonstrate a systematic change of the nonlocal resistance vs. bias characteristics with increasing contact resistances, which can be varied in the fabrication process. For samples with higher contact resistances, CAR is weakened relative to EC in the midgap regime, possibly due to dynamical Coulomb blockade. Gaining control of CAR is an important step towards the realization of a solid state entangler.Comment: 5 pages, 4 figures, submitted to PR

Role of hexagonal boron nitride in protecting ferromagnetic nanostructures from oxidation

Ferromagnetic contacts are widely used to inject spin polarized currents into non-magnetic materials such as semiconductors or 2-dimensional materials like graphene. In these systems, oxidation of the ferromagnetic materials poses an intrinsic limitation on device performance. Here we investigate the role of ex-situ transferred chemical vapour deposited hexagonal boron nitride (hBN) as an oxidation barrier for nanostructured cobalt and permalloy electrodes. The chemical state of the ferromagnets was investigated using X-ray photoemission electron microscopy owing to its high sensitivity and lateral resolution. We have compared the oxide thickness formed on ferromagnetic nanostructures covered by hBN to uncovered reference structures. Our results show that hBN reduces the oxidation rate of ferromagnetic nanostructures suggesting that it could be used as an ultra-thin protection layer in future spintronic devices.Comment: 7 pages, 6 figure

Nanometer lithography on silicon and hydrogenated amorphous silicon with low-energy electrons

We report the local oxidation of hydrogen terminated silicon (Si) surfaces induced with the scanning-tunneling microscope (STM) operating in air and by a beam of free low-energy electrons. With STM, oxide lines were written in Si(100) and Si(110) and transferred into the substrate by wet etching. In case of Si(110) trenches with a width as small as 35 nm and a depth of 300 nm were made. The same process has also successfully been applied to the patterning of hydrogenated amorphous silicon (a-Si:H) thin films. We demonstrate the fabrication of metallic ‘nanowires’ using a-Si:H as resist layer. With regard to the process of oxidation, it is found that the oxide written with STM is apparently not proportional to the electron current, in contrast to results obtained with a beam of free electrons in an oxygen gas-environment. The dose needed to remove the hydrogen was determined as a function of electron energy. This dose is minimal for 100 eV electrons amounting to 4 mC/cm2