Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator

On Sensitivity Improvement of Optically Triggered OEIC

Introduction Interconnection technology combining processing units is one of the key targets of innovation of massively parallel computaional systems. One of the options to realize the broadband interconnection is the use of optical bus, where the node modules will convert the optical signal into electronic digital signal and vice versa. To implement an efficient OE converter module is therefore very important. A concept of embedding photodiode arrays into the digital logic integrated circuits has been investigated and digital manipulation by the optoelectronic integrated circuits (OEIC) have been tried by several groups. With the increase of the complexity, however, the difference of signal levels between optical and electrical digital systems causes a serious problem. Namely the typical output levels from photodiodes on the order of several tens millivolt, far smaller than the standard logic swing of several volts in digital IC's. Preamplifier stages occupy a significant ar

RF Noise Simulation for Submicron MOSFET's Based on Hydrodynamic Model

... In this paper, a mixed approach of one-dimensional active transmission line modeling and two-dimensional HD device simulation is used. The active transmission line analogy greatly saves computation time while the local information from the device simulator retains simulation accuracy. Validity and error of noise simulation are also discussed