Development of a novel endolysin, PanLys.1, for the specific inhibition of

Objective The objective of this study was to develop a novel endolysin (PanLys.1) for the specific killing of the ruminal hyper-ammonia-producing bacterium Peptostreptococcus anaerobius (P. anaerobius). Methods Whole genome sequences of P. anaerobius strains and related bacteriophages were collected from the National Center for Biotechnology Information database, and the candidate gene for PanLys.1 was isolated based on amino acid sequences and conserved domain database (CDD) analysis. The gene was overexpressed using a pET system in Escherichia coli BL21 (DE3). The lytic activity of PanLys.1 was evaluated under various conditions (dosage, pH, temperature, NaCl, and metal ions) to determine the optimal lytic activity conditions. Finally, the killing activity of PanLys.1 against P. anaerobius was confirmed using an in vitro rumen fermentation system. Results CDD analysis showed that PanLys.1 has a modular design with a catalytic domain, amidase-2, at the N-terminal, and a cell wall binding domain, from the CW-7 superfamily, at the C-terminal. The lytic activity of PanLys.1 against P. anaerobius was the highest at pH 8.0 (p<0.05) and was maintained at 37°C to 45°C, and 0 to 250 mM NaCl. The activity of PanLys.1 significantly decreased (p<0.05) after Mn2+ or Zn2+ treatment. The relative abundance of P. anaerobius did not decrease after administration PanLys.1 under in vitro rumen conditions. Conclusion The application of PanLys.1 to modulate P. anaerobius in the rumen might not be feasible because its lytic activity was not observed in in vitro rumen system

FET-based nanobiosensors for the detection of smell and taste

Various nanobiosensors composed of biomaterials and nanomaterials have been developed, due to their demonstrated advantage of showing high performance. Among various biomaterials for biological recognition elements of the nanobiosensor, sensory receptors, such as olfactory and taste receptors, are promising biomaterials for developing nanobiosensors, because of their high selectivity to target molecules. Field-effect transistors (FET) with nanomaterials such as carbon nanotube (CNT), graphene, and conducting polymer nanotube (CPNT), can be combined with the biomaterials to enhance the sensitivity of nanobiosensors. Recently, many efforts have been made to develop nanobiosensors using biomaterials, such as olfactory receptors and taste receptors for detecting various smells and tastes. This review focuses on the biomaterials and nanomaterials used in nanobiosensor systems and studies of various types of nanobiosensor platforms that utilize olfactory receptors and taste receptors which could be applied to a wide range of industrial fields, including the food and beverage industry, environmental monitoring, the biomedical field, and anti-terrorism.N

Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics

For transition metal dichalcogenides, the fluctuation of the channel current due to charged impurities is attributed to a large surface area and a thickness of a few nanometers. To investigate current variance at the interface of transistors, we obtain the low-frequency (LF) noise features of MoTe2 multilayer field-effect transistors with different dielectric environments. The LF noise properties are analyzed using the combined carrier mobility and carrier number fluctuation model which is additionally parametrized with an interfacial Coulomb-scattering parameter (α) that varies as a function of the accumulated carrier density (Nacc) and the location of the active channel layer of MoTe2. Our model shows good agreement with the current power spectral density (PSD) of MoTe2 devices from a low to high current range and indicates that the parameter α exhibits a stronger dependence on Nacc with an exponent -γ of -1.18 to approximately -1.64 for MoTe2 devices, compared with -0.5 for Si devices. The raised Coulomb scattering of the carriers, particularly for a low-current regime, is considered to be caused by the unique traits of layered semiconductors such as interlayer coupling and the charge distribution strongly affected by the device structure under a gate bias, which completely change the charge screening effect in MoTe2 multilayer. Comprehensive static and LF noise analyses of MoTe2 devices with our combined model reveal that a chemical-vapor deposited h-BN monolayer underneath MoTe2 channel and the Al2O3 passivation layer have a dissimilar contribution to the reduction of current fluctuation. The three-fold enhanced carrier mobility due to the h-BN is from the weakened carrier scattering at the gate dielectric interface and the additional 30% increase in carrier mobility by Al2O3 passivation is due to the reduced interface traps. © 2016 American Chemical Society113141sciescopu

Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure

Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS2 can induce ∼6.5 × 1011 cm−2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS2 on h-BN was found to be ∼5 × 1013 cm−2 at high temperature and was significantly reduced at low temperature. © 2016 American Chemical Society Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS2/h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal−insulator transition at a much lower charge density of ∼1.0 × 1012 cm−2 (T = 25 K). The reduced effective Schottky barrier height in MoS2/h-BN is attributed to the decreased effective work function of MoS2 arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO2. © 2016 American Chemical Society118221sciescopu

Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer

As the thickness becomes thinner, the importance of Coulomb scattering in two-dimensional layered materials increases because of the close proximity between channel and interfacial layer and the reduced screening effects. The Coulomb scattering in the channel is usually obscured mainly by the Schottky barrier at the contact in the noise measurements. Here, we report low-temperature (T) noise measurements to understand the Coulomb scattering mechanism in the MoS2 channel in the presence of h-BN buffer layer on the silicon dioxide (SiO2) insulating layer. One essential measure in the noise analysis is the Coulomb scattering parameter (αSC) which is different for channel materials and electron excess doping concentrations. This was extracted exclusively from a 4-probe method by eliminating the Schottky contact effect. We found that the presence of h-BN on SiO2 provides the suppression of αSC twice, the reduction of interfacial traps density by 100 times, and the lowered Schottky barrier noise by 50 times compared to those on SiO2 at T = 25 K. These improvements enable us to successfully identify the main noise source in the channel, which is the trapping-detrapping process at gate dielectrics rather than the charged impurities localized at the channel, as confirmed by fitting the noise features to the carrier number and correlated mobility fluctuation model. Further, the reduction in contact noise at low temperature in our system is attributed to inhomogeneous distributed Schottky barrier height distribution in the metal-MoS2 contact region. © 2017 American Chemical Society1991sciescopu

Highly twisted supercoils for superelastic multi-functional fibres

The development of electrically conductive fibres is attractive for wearable electronics, but performance should be maintained upon deformation and tensile strain. Here the authors fabricate flexible, stretchable, carbon nanotube-coated spandex fibres for supercapacitors and artificial muscles

Suppression of Interfacial Current Fluctuation in MoTe₂ Transistors with Different Dielectrics

For transition metal dichalcogenides, the fluctuation of the channel current due to charged impurities is attributed to a large surface area and a thickness of a few nanometers. To investigate current variance at the interface of transistors, we obtain the low-frequency (LF) noise features of MoTe₂ multilayer field-effect transistors with different dielectric environments. The LF noise properties are analyzed using the combined carrier mobility and carrier number fluctuation model which is additionally parametrized with an interfacial Coulomb-scattering parameter (α) that varies as a function of the accumulated carrier density (<i>N</i>_acc) and the location of the active channel layer of MoTe₂. Our model shows good agreement with the current power spectral density (PSD) of MoTe₂ devices from a low to high current range and indicates that the parameter α exhibits a stronger dependence on <i>N</i>_acc with an exponent −γ of −1.18 to approximately −1.64 for MoTe₂ devices, compared with −0.5 for Si devices. The raised Coulomb scattering of the carriers, particularly for a low-current regime, is considered to be caused by the unique traits of layered semiconductors such as interlayer coupling and the charge distribution strongly affected by the device structure under a gate bias, which completely change the charge screening effect in MoTe₂ multilayer. Comprehensive static and LF noise analyses of MoTe₂ devices with our combined model reveal that a chemical-vapor deposited <i>h</i>-BN monolayer underneath MoTe₂ channel and the Al₂O₃ passivation layer have a dissimilar contribution to the reduction of current fluctuation. The three-fold enhanced carrier mobility due to the <i>h</i>-BN is from the weakened carrier scattering at the gate dielectric interface and the additional 30% increase in carrier mobility by Al₂O₃ passivation is due to the reduced interface traps

Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS₂/<i>h</i>‑BN Heterostructure

Layered hexagonal boron nitride (<i>h</i>-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the <i>h</i>-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of <i>h</i>-BN thin film as a substrate for monolayer MoS₂ can induce ∼6.5 × 10¹¹ cm^–2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS₂ on <i>h</i>-BN was found to be ∼5 × 10¹³ cm^–2 at high temperature and was significantly reduced at low temperature. Further, the inserted <i>h</i>-BN enables us to reduce the Coulombic charge scattering in MoS₂/<i>h</i>-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal–insulator transition at a much lower charge density of ∼1.0 × 10¹² cm^–2 (<i>T</i> = 25 K). The reduced effective Schottky barrier height in MoS₂/<i>h</i>-BN is attributed to the decreased effective work function of MoS₂ arisen from <i>h</i>-BN induced <i>n</i>-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO₂

Understanding Coulomb Scattering Mechanism in Monolayer MoS₂ Channel in the Presence of <i>h</i>‑BN Buffer Layer

As the thickness becomes thinner, the importance of Coulomb scattering in two-dimensional layered materials increases because of the close proximity between channel and interfacial layer and the reduced screening effects. The Coulomb scattering in the channel is usually obscured mainly by the Schottky barrier at the contact in the noise measurements. Here, we report low-temperature (<i>T</i>) noise measurements to understand the Coulomb scattering mechanism in the MoS₂ channel in the presence of <i>h</i>-BN buffer layer on the silicon dioxide (SiO₂) insulating layer. One essential measure in the noise analysis is the Coulomb scattering parameter (α_SC) which is different for channel materials and electron excess doping concentrations. This was extracted exclusively from a 4-probe method by eliminating the Schottky contact effect. We found that the presence of <i>h</i>-BN on SiO₂ provides the suppression of α_SC twice, the reduction of interfacial traps density by 100 times, and the lowered Schottky barrier noise by 50 times compared to those on SiO₂ at <i>T</i> = 25 K. These improvements enable us to successfully identify the main noise source in the channel, which is the trapping–detrapping process at gate dielectrics rather than the charged impurities localized at the channel, as confirmed by fitting the noise features to the carrier number and correlated mobility fluctuation model. Further, the reduction in contact noise at low temperature in our system is attributed to inhomogeneous distributed Schottky barrier height distribution in the metal–MoS₂ contact region

Wireless portable bioelectronic nose device for multiplex monitoring toward food freshness/spoilage

© 2022 Elsevier B.V.Monitoring food freshness/spoilage is important to ensure food quality and safety. Current methods of food quality monitoring are mostly time-consuming and labor intensive processes that require massive analytical equipment. In this study, we developed a portable bioelectronic nose (BE-nose) integrated with trace amine-associated receptor (TAAR) nanodiscs (NDs), allowing food quality monitoring via the detection of food spoilage indicators, including the biogenic amines cadaverine (CV) and putrescine (PT). The olfactory receptors TAAR13c and TAAR13d, which have specific affinities for CV and PT, were produced and successfully reconstituted in ND structures. TAAR13 NDs BE-nose-based side-gated field-effect transistor (SG-FET) system was constructed by utilizing a graphene micropattern (GM) into which two types of olfactory NDs (TAAR13c ND and TAAR13d ND) were introduced, and this system showed ultrahigh sensitivity for a limit of detection (LOD) of 1 fM for CV and PT. Moreover, the binding affinities between the TAAR13 NDs and the indicators were confirmed by a tryptophan fluorescence quenching assay and biosimulations, in which the specific binding site was confirmed. Gas-phase indicators were detected by the TAAR13 NDs BE-nose platform, and the LODs for CV and PT were confirmed to be 26.48 and 7.29 ppb, respectively. In addition, TAAR13 NDs BE-nose was fabricated with commercial gas sensors as a portable platform for the measurement of NH3 and H2S, multiplexed monitoring was achieved with similar performance, and the change ratio of the indicators was observed in a real sample. The integration of commercial gas sensors on a BE-nose enhanced the accuracy and reliability for the quality monitoring of real food samples. These results indicate that the portable TAAR13 NDs BE-nose can be used to monitor CV and PT over a wide range of concentrations, therefore, the electronic nose platform can be utilized for monitoring the freshness/spoilage step in various foods.N