Femtosecond coherent spectroscopy of four-wave mixing and the spectroscopy of transient gratings in GaAs/AlGaAs semiconductor heterostructures at room temperature

Results from femtosecond coherent spectroscopy of four-wave mixing in GaAs/AlGaAs semiconductor heterostructures at room temperature are presented. Electron diffusivities and their spins are found via spectroscopy of transient gratings. Investigations in the field of spin transport in GaAs/AlGaAs heterostructures are performed with the aim of their possible use in spintronics applications. © 2014 Allerton Press, Inc

Femtosecond coherent spectroscopy of four-wave mixing and photon echoes in a GaAs/AlGaAs heterostructure at room temperature

The results from experiments employing coherent femtosecond spectroscopy in a layer of two-dimensional electron gas at the boundary of the GaAs/AlGaAs heterojunction at room temperature are presented. The decay curves of primary femtosecond photon echo are obtained. The decoherence time in two-dimensional electron gas depends strongly on the power of the exciting pulse and varies from 36 to 54 fs. The dephasing time is studied for the first time as a function of the power of exciting pulses at room temperature. It is established that this dependence obeys the law T 2 ∼ N -0.22, which differs from the typical law T 2 ∼ N -1 for unscreened electron-electron interaction in semiconductor crystals. Analysis shows that electron-phonon interaction plays an important part along with electron-electron interaction. The induced spin gratings in the GaAs/AlGaAs heterostructure are studied with an eye to their possible application in spintronics. © Allerton Press, Inc., 2012

Electron dynamics at GaAs-AlGaAs heterojunction studied by ultrafast spectroscopy

In this letter the electron and spin dynamics at GaAs/AlGaAs heterojunction was studied by ultrafast spectroscopy techniques (photon echo and transient grating studies). Relaxation times and diffusion coefficients of photoexcited electrons and spins were obtained using pure optical setup. The estimated spin diffusion coefficient value of 160 cm2/s is relatively high and comparable to the electron diffusion coefficient of 200 cm2/s. This feature makes GaAs/AlGaAs heterosructure a promising material for practical application in semiconductor spintronics. © Published under licence by IOP Publishing Ltd

Ultrafast Below-Band-Gap Laser Pulse Induced Relaxations in CdS Crystal

© Published under licence by IOP Publishing Ltd. We report an experimental study of the intra- and interband transitions in bulk CdS crystal induced by a strong below-band-edge femtosecond laser pulse. An additional peak was observed in spectrally resolved four-wave mixing signal shifted to lower energy and positive time delay

Femtosecond coherent spectroscopy of four-wave mixing and the spectroscopy of transient gratings in GaAs/AlGaAs semiconductor heterostructures at room temperature

Results from femtosecond coherent spectroscopy of four-wave mixing in GaAs/AlGaAs semiconductor heterostructures at room temperature are presented. Electron diffusivities and their spins are found via spectroscopy of transient gratings. Investigations in the field of spin transport in GaAs/AlGaAs heterostructures are performed with the aim of their possible use in spintronics applications. © 2014 Allerton Press, Inc

Femtosecond coherent spectroscopy of four-wave mixing and photon echoes in a GaAs/AlGaAs heterostructure at room temperature

The results from experiments employing coherent femtosecond spectroscopy in a layer of two-dimensional electron gas at the boundary of the GaAs/AlGaAs heterojunction at room temperature are presented. The decay curves of primary femtosecond photon echo are obtained. The decoherence time in two-dimensional electron gas depends strongly on the power of the exciting pulse and varies from 36 to 54 fs. The dephasing time is studied for the first time as a function of the power of exciting pulses at room temperature. It is established that this dependence obeys the law T 2 ∼ N -0.22, which differs from the typical law T 2 ∼ N -1 for unscreened electron-electron interaction in semiconductor crystals. Analysis shows that electron-phonon interaction plays an important part along with electron-electron interaction. The induced spin gratings in the GaAs/AlGaAs heterostructure are studied with an eye to their possible application in spintronics. © Allerton Press, Inc., 2012

Electron dynamics at GaAs-AlGaAs heterojunction studied by ultrafast spectroscopy

In this letter the electron and spin dynamics at GaAs/AlGaAs heterojunction was studied by ultrafast spectroscopy techniques (photon echo and transient grating studies). Relaxation times and diffusion coefficients of photoexcited electrons and spins were obtained using pure optical setup. The estimated spin diffusion coefficient value of 160 cm2/s is relatively high and comparable to the electron diffusion coefficient of 200 cm2/s. This feature makes GaAs/AlGaAs heterosructure a promising material for practical application in semiconductor spintronics. © Published under licence by IOP Publishing Ltd

Electron dynamics at GaAs-AlGaAs heterojunction studied by ultrafast spectroscopy

In this letter the electron and spin dynamics at GaAs/AlGaAs heterojunction was studied by ultrafast spectroscopy techniques (photon echo and transient grating studies). Relaxation times and diffusion coefficients of photoexcited electrons and spins were obtained using pure optical setup. The estimated spin diffusion coefficient value of 160 cm2/s is relatively high and comparable to the electron diffusion coefficient of 200 cm2/s. This feature makes GaAs/AlGaAs heterosructure a promising material for practical application in semiconductor spintronics. © Published under licence by IOP Publishing Ltd

Femtosecond coherent spectroscopy of four-wave mixing and the spectroscopy of transient gratings in GaAs/AlGaAs semiconductor heterostructures at room temperature

Results from femtosecond coherent spectroscopy of four-wave mixing in GaAs/AlGaAs semiconductor heterostructures at room temperature are presented. Electron diffusivities and their spins are found via spectroscopy of transient gratings. Investigations in the field of spin transport in GaAs/AlGaAs heterostructures are performed with the aim of their possible use in spintronics applications. © 2014 Allerton Press, Inc

Femtosecond coherent spectroscopy of four-wave mixing and photon echoes in a GaAs/AlGaAs heterostructure at room temperature

The results from experiments employing coherent femtosecond spectroscopy in a layer of two-dimensional electron gas at the boundary of the GaAs/AlGaAs heterojunction at room temperature are presented. The decay curves of primary femtosecond photon echo are obtained. The decoherence time in two-dimensional electron gas depends strongly on the power of the exciting pulse and varies from 36 to 54 fs. The dephasing time is studied for the first time as a function of the power of exciting pulses at room temperature. It is established that this dependence obeys the law T 2 ∼ N -0.22, which differs from the typical law T 2 ∼ N -1 for unscreened electron-electron interaction in semiconductor crystals. Analysis shows that electron-phonon interaction plays an important part along with electron-electron interaction. The induced spin gratings in the GaAs/AlGaAs heterostructure are studied with an eye to their possible application in spintronics. © Allerton Press, Inc., 2012