648 research outputs found
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Carrier localization in gallium nitride
In wide bandgap GaN, a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 10{sup 19} to 10{sup 20} cm{sup - 3} in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models, a nitrogen vacancy acts as a donor but its formation energy is very large in n-type materials, making this suggestion controversial. We have investigated the nature of this yet unidentified donor at large hydrostatic pressure. Results from infrared reflection and Raman scattering indicate strong evidence for localization of free carriers by large pressures. The carrier density is drastically decreased by two orders of magnitude between 20 and 30 GPa. Several techniques provide independent evidence for results in earlier reports and present the first quantitative analysis. A possible interpretation of this effect in terms of the resonant donor level is presented
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Pressure dependence of Se absorption lines in AlSb
Using far infrared absorption spectroscopy, the authors have investigated electronic transition spectra of Se donors in AlSb as a function of hydrostatic pressure. At least two distinct ground to bound excited state transition lines, which depend quadratically on the pressure, can be seen. At pressures between 30 and 50 kbar, evidence of an anti-crossing between one of the electronic transitions and a peak which they attribute to the 2 zone center LO phonon mode can be seen
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Gallium self-diffusion in gallium arsenide: A study using isotope heterostructures
Ga self-diffusion was studied with secondary-ion mass spectroscopy in {sup 69}GaAs/{sup 71}GaAs isotope heterostructures grown by molecular beam epitaxy on GaAs substrates. Results show that the Ga self- diffusion coefficient in intrinsic GaAs can be described accurately with D = (43{+-}25 cm{sup 2}s{sup -1})exp(-4.24{+-}0.06 eV/k{sub B}T) over 6 orders of magnitude between 800 and 1225 C under As-rich condition. Experimental results combined with theoretical calculations strongly suggest Ga vacancy being the dominant native defect controlling the diffusion. No significant doping effects were observed in samples where the substrates were doped with Te up to 4x10{sup 17}cm{sup -3} or Zn up to 1x10{sup 19}cm{sup -3}
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Compositional Modulation in InxGa1-xN
Transmission Electron Microscopy and x-ray diffraction were used to study compositional modulation in In{sub x}Ga{sub 1-x} N layers grown with compositions close to the miscibility gap. The samples (0.34 < x < 0.8) were deposited by molecular beam epitaxy using either a 200-nm-thick AlN or GaN buffer layer grown on a sapphire substrate. In the TEM imaging mode this modulation is seen as black/white fringes which can be considered as self-assembled thin quantum wells. Periodic compositional modulation leads to extra electron diffraction spots and satellite reflections in x-ray diffraction in the {theta}-2{theta} coupled geometry. The modulation period was determined using both methods. Larger modulation periods were observed for layers with higher In content and for those having larger mismatch with the underlying AlN buffer layer. Compositional modulation was not observed for a sample with x = 0.34 grown on a GaN buffer layer. Modulated films tend to have large 'Stokes shifts' between their absorption edge and photoluminescence peak
Compositional tuning of ferromagnetism in Ga1-xMnxP
We report the magnetic and transport properties of Ga1-xMnxP synthesized via
ion implantation followed by pulsed laser melting over a range of x, namely
0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the
ferromagnetic Curie temperature with x associated with the hole-mediated
ferromagnetic phase while thermal annealing above 300 C leads to a quenching of
ferromagnetism that is accompanied by a reduction of the substitutional
fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is
non-metallic over the entire composition range. At the lower temperatures over
which the films are ferromagnetic, hole transport occurs via hopping conduction
in a Mn-derived band; at higher temperatures it arises from holes in the
valence band which are thermally excited across an energy gap that shrinks with
x.Comment: To be published in Solid State Communication
CUORE: A Cryogenic Underground Observatory for Rare Events
CUORE is a proposed tightly packed array of 1000 TeO2 bolometers, each being
a cube 5 cm on a side with a mass of 760 g. The array consists of 25 vertical
towers, arranged in a square of 5 towers by 5 towers, each containing 10 layers
of 4 crystals. The design of the detector is optimized for ultralow-background
searches: for neutrinoless double beta decay of 130Te (33.8% abundance), cold
dark matter, solar axions, and rare nuclear decays. A preliminary experiment
involving 20 crystals 3x3x6 cm3 of 340 g has been completed, and a single CUORE
tower is being constructed as a smaller scale experiment called CUORICINO. The
expected performance and sensitivity, based on Monte Carlo simulations and
extrapolations of present results, are reported.Comment: 39 pages, 12 figures, submitted to NI
Star Formation and Dynamics in the Galactic Centre
The centre of our Galaxy is one of the most studied and yet enigmatic places
in the Universe. At a distance of about 8 kpc from our Sun, the Galactic centre
(GC) is the ideal environment to study the extreme processes that take place in
the vicinity of a supermassive black hole (SMBH). Despite the hostile
environment, several tens of early-type stars populate the central parsec of
our Galaxy. A fraction of them lie in a thin ring with mild eccentricity and
inner radius ~0.04 pc, while the S-stars, i.e. the ~30 stars closest to the
SMBH (<0.04 pc), have randomly oriented and highly eccentric orbits. The
formation of such early-type stars has been a puzzle for a long time: molecular
clouds should be tidally disrupted by the SMBH before they can fragment into
stars. We review the main scenarios proposed to explain the formation and the
dynamical evolution of the early-type stars in the GC. In particular, we
discuss the most popular in situ scenarios (accretion disc fragmentation and
molecular cloud disruption) and migration scenarios (star cluster inspiral and
Hills mechanism). We focus on the most pressing challenges that must be faced
to shed light on the process of star formation in the vicinity of a SMBH.Comment: 68 pages, 35 figures; invited review chapter, to be published in
expanded form in Haardt, F., Gorini, V., Moschella, U. and Treves, A.,
'Astrophysical Black Holes'. Lecture Notes in Physics. Springer 201
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