2,124 research outputs found
D- shallow donor near a semiconductor-metal and a semiconductor-dielectric interface
The ground state energy and the extend of the wavefunction of a negatively
charged donor (D-) located near a semiconductor-metal or a
semiconductor-dielectric interface is obtained. We apply the effective mass
approximation and use a variational two-electron wavefunction that takes into
account the influence of all image charges that arise due to the presence of
the interface, as well as the correlation between the two electrons bound to
the donor. For a semiconductor-metal interface, the D- binding energy is
enhanced for donor positions d>1.5a_B (a_B is the effective Bohr radius) due to
the additional attraction of the electrons with their images. When the donor
approaches the interface (i.e. d<1.5a_B) the D- binding energy drops and
eventually it becomes unbound. For a semiconductor-dielectric (or a
semiconductor-vacuum) interface the D- binding energy is reduced for any donor
position as compared to the bulk case and the system becomes rapidly unbound
when the donor approaches the interface.Comment: Submitted to Phys. Rev. B on 19 November 200
Refined Chern-Simons theory
The partition function of refined Chern-Simons theory on 3d sphere for the
exceptional gauge algebras is presented in terms of multiple sine
functions. Gopakumar-Vafa (BPS) approximation is calculated and presented in
the form of some refined topological string partition function.Comment: On the basis of the talk given at the workshop SQS'2
Two-fold refinement of non simply laced Chern-Simons theories
Inspired by the two-parameter Macdonald-Cherednik deformation of the formulae
for non simply laced simple Lie algebras, we propose a two-fold refinement of
the partition function of the corresponding Chern-Simons theory on . It is
based on a two-fold refinement of the Kac-Peterson formula for the volume of
the fundamental domain of the coroot lattice of non simply laced Lie algebras.
We further derive explicit integral representations of the two-fold refined
Chern-Simons partition functions. We also present the corresponding generalized
universal-like expressions for them. With these formulae in hand, one can try
to investigate a possible duality of the corresponding Chern-Simons theories
with hypothetical two-fold refined topological string theories.Comment: LaTex, 8 page
Structured diabetes self-management education and its association with perceived diabetes knowledge, information, and disease distress: Results of a nationwide population-based study
Objective:
To evaluate, how participation in structured diabetes self-management education (DSME) programs is associated with perceived level of knowledge about diabetes, information needs, information sources and disease distress.
Methods:
We included 796 ever- and 277 never-DSME participants of the population-based survey “Disease knowledge and information needs - Diabetes mellitus (2017)” from Germany. Data on perceived level of diabetes knowledge (12 items), information needs (11 items), information sources (13 items) and disease distress (2 indices) were collected. Multiple logistic regression analyses were used to examine the association of DSME-participation with these outcomes.
Results:
DSME-participants showed a higher level of diabetes knowledge compared to never-DSME participants, particularly in aspects concerning diabetes in general (odds ratio 2.53; 95% confidence intervals 1.48–4.33), treatment (2.41; 1.36–4.26), acute complications (1.91; 1.07–3.41) and diabetes in everyday life (1.83; 1.04–3.22). DSME-participants showed higher information needs regarding late complications (1.51; 1.04–2.18) and acute complications (1.71; 1.71–2.48) than DSME never participants. DSME-participants more frequently consulted diabetologists (5.54; 3.56–8.60) and diabetes care specialists (5.62; 3.61–8.75) as information sources. DSME participation was not associated with disease distress.
Conclusion:
DSME is a valuable tool for improving individual knowledge about diabetes. However, DSME should focus more on psychosocial aspects to reduce the disease burden
Highly sensitive terahertz measurement of layer thickness using a two-cylinder waveguide sensor
We report on the layer thickness determination on dielectrically coated metal cylinders using terahertz (THz) time-domain spectroscopy. A considerable sensitivity increase of up to a factor of 150 is obtained for layers down to 2.5 um thickness by introducing an experimental geometry based on a two-cylinder waveguide sensor. The layer attached on one metal cylinder is guided in contact with the second metal cylinder in the THz beam waist. This approach uses concepts of adiabatic THz wave compression and the advantages of THz waveguides. The results are compared to measurements on free-standing layers.Peer reviewedElectrical and Computer Engineerin
Explosions of water clusters in intense laser fields
Energetic, highly-charged oxygen ions, (), are copiously
produced upon laser field-induced disassembly of highly-charged water clusters,
and , 60, that are formed by seeding high-pressure
helium or argon with water vapor. clusters (n40000) formed under
similar experimental conditions are found undergo disassembly in the Coulomb
explosion regime, with the energies of ions showing a
dependence. Water clusters, which are argued to be considerably smaller in
size, should also disassemble in the same regime, but the energies of fragment
O ions are found to depend linearly on which, according to
prevailing wisdom, ought to be a signature of hydrodynamic expansion that is
expected of much larger clusters. The implication of these observations on our
understanding of the two cluster explosion regimes, Coulomb explosion and
hydrodynamic expansion, is discussed. Our results indicate that charge state
dependences of ion energy do not constitute an unambiguous experimental
signature of cluster explosion regime.Comment: Submitted to Phys. Rev.
Continuous-distribution puddle model for conduction in trilayer graphene
An insulator-to-metal transition is observed in trilayer graphene based on
the temperature dependence of the resistance under different applied gate
voltages. At small gate voltages the resistance decreases with increasing
temperature due to the increase in carrier concentration resulting from thermal
excitation of electron-hole pairs. At large gate voltages excitation of
electron-hole pairs is suppressed, and the resistance increases with increasing
temperature because of the enhanced electron-phonon scattering. We find that
the simple model with overlapping conduction and valence bands, each with
quadratic dispersion relations, is unsatisfactory. Instead, we conclude that
impurities in the substrate that create local puddles of higher electron or
hole densities are responsible for the residual conductivity at low
temperatures. The best fit is obtained using a continuous distribution of
puddles. From the fit the average of the electron and hole effective masses can
be determined.Comment: 18 pages, 5 figure
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