Bipolar Resistive Switching Characteristics of Ex-situ Synthesized TiO2-ZnO Nanocomposite

In this present article, we have reported a simple and cost-effective ex-situ synthesis of TiO2-ZnO (TZ) nanocomposite thin film by utilizing sol-gel, hydrothermal and solid-state reaction methods. The Ag/TZ/FTO nanocomposite device was developed and demonstrated the bipolar resistive switching (RS) characteristics for resistive memory applications. The result of XRD analysis confirms that the nanocomposite has mixed tetragonal and hexagonal crystal structures of TiO2 and ZnO, respectively. The hysteresis loop is an essential criterion for recognizing memristive devices and similar characteristic was noticed for the developed nanocomposite device. Besides, basic memristive properties were calculated from the I-V data. The charge transportation of Ag/TZ/FTO nanocomposite device takes place because of Ohmic and space charge limited current. The collective effect of oxygen vacancies and Ag ions was a basis of RS effect in the Ag/TZ/FTO nanocomposite device

Effect of Sulfurization Time on the Physical Properties of Tin (II) Monosulfide Thin Films

Tin (II) monosulfide (SnS) films were prepared via sulfurization using sputtered Sn precursors of the tin metal layers in the presence of elemental sulfur vapor as a function of sulfurization time (ts) in the range of 30–180 min while keeping other parameters constant. The properties of these sulfurized layers were examined through suitable characterization techniques. The diffraction patterns exhibited various planes with the orientations (110), (120), (021), (101), (111), (211), (131), (210), (141), (002), (112), (122), and (042) corresponding to orthorhombic SnS at ts ≤ 90 min. However, for ts ≥ 120 min, the diffraction patterns showed a single (111) plane and enhanced the intensity of the peak with the increase of ts up to 150 min; with further increase of time, the peak intensity was found to decrease. The Raman spectra of films sulfurized at various ts showed modes at 95, 162, 189, 219, and 284 cm−1 for times were lower than 120 min and 95, 189, and 219 cm−1 for ts ≥ 120 min, related to SnS. In the transmittance spectra of the sulfurized films, it is clear that the film grown at ts = 30 min had higher transmittance, and with the increase of ts to 120 min, transmittance was decreased. For further extension of ts to 150 min, a sharp falling of the absorption edge was observed