Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor

The determination to develop fast, efficient devices has led to vast studies on photonic circuits but it is difficult to shrink these circuits below the diffraction limit of light. However, the coupling between surface plasmon polaritons and nanostructures in the near-field shows promise in developing next-generation integrated circuitry. In this work, we demonstrate the potential for integrating nanoplasmonic-based light guides with atomically thin materials for on-chip near-field plasmon detection. Specifically, we show near-field electrical detection of silver nanowire plasmons with the atomically thin semiconductor molybdenum disulfide. Unlike graphene, atomically thin semiconductors such as molybdenum disulfide exhibit a bandgap that lends itself for the excitation and detection of plasmons. Our fully integrated plasmon detector exhibits plasmon responsivities of ∼255 mA/W that corresponds to highly efficient plasmon detection (∼0.5 electrons per plasmon)

Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure

The optical properties of atomically thin semiconductor materials have been widely studied because of the isolation of monolayer transition metal dichalcogenides (TMDCs). They have rich optoelectronic properties owing to their large direct bandgap, the interplay between the spin and the valley degree of freedom of charge carriers, and the recently discovered localized excitonic states giving rise to single photon emission. In this Letter, we study the quantum-confined Stark effect of these localized emitters present near the edges of monolayer tungsten diselenide (WSe₂). By carefully designing sequences of metallic (graphene), insulating (hexagonal boron nitride), and semiconducting (WSe₂) two-dimensional materials, we fabricate a van der Waals heterostructure field effect device with WSe₂ hosting quantum emitters that is responsive to external static electric field applied to the device. A very efficient spectral tunability up to 21 meV is demonstrated. Further, evaluation of the spectral shift in the photoluminescence signal as a function of the applied voltage enables us to extract the polarizability volume (up to 2000 ų) as well as information on the dipole moment of an individual emitter. The Stark shift can be further modulated on application of an external magnetic field, where we observe a flip in the sign of dipole moment possibly due to rearrangement of the position of electron and hole wave functions within the emitter

Nanoscale Fluorescence Lifetime Imaging of an Optical Antenna with a Single Diamond NV Center

Solid-state quantum emitters, such as artificially engineered quantum dots or naturally occurring defects in solids, are being investigated for applications ranging from quantum information science and optoelectronics to biomedical imaging. Recently, these same systems have also been studied from the perspective of nanoscale metrology. In this letter, we study the near-field optical properties of a diamond nanocrystal hosting a single nitrogen vacancy center. We find that the nitrogen vacancy center is a sensitive probe of the surrounding electromagnetic mode structure. We exploit this sensitivity to demonstrate nanoscale fluorescence lifetime imaging microscopy (FLIM) with a single nitrogen vacancy center by imaging the local density of states of an optical antenna