9,520 research outputs found

    Evidence for magnetoplasmon character of the cyclotron resonance response of a two-dimensional electron gas

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    Experimental results on the absolute magneto-transmission of a series of high density, high mobility GaAs quantum wells are compared with the predictions of a recent magnetoplasmon theory for values of the filling factor above 2. We show that the magnetoplasmon picture can explain the non-linear features observed in the magnetic field evolution of the cyclotron resonance energies and of the absorption oscillator strength. This provides experimental evidence that inter Landau level excitations probed by infrared spectroscopy need to be considered as many body excitations in terms of magnetoplasmons: this is especially true when interpreting the oscillator strengths of the cyclotron transitions

    Strong Electron Tunneling through a Small Metallic Grain

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    Electron tunneling through mesoscopic metallic grains can be treated perturbatively only provided the tunnel junction conductances are sufficiently small. If it is not the case, fluctuations of the grain charge become strong. As a result (i) contributions of all -- including high energy -- charge states become important and (ii) excited charge states become broadened and essentially overlap. At the same time the grain charge remains discrete and the system conductance ee-periodically depends on the gate charge. We develop a nonperturbative approach which accounts for all these features and calculate the temperature dependent conductance of the system in the strong tunneling regime at different values of the gate charge.Comment: revtex, 8 pages, 2 .ps figure

    Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

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    We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 kΩ\Omega)1^{-1}. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.Comment: revtex, 4 page

    Coulomb Interaction and Quantum Transport through a Coherent Scatterer

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    An interplay between charge discreteness, coherent scattering and Coulomb interaction yields nontrivial effects in quantum transport. We derive a real time effective action and an equivalent quantum Langevin equation for an arbitrary coherent scatterer and evaluate its current-voltage characteristics in the presence of interactions. Within our model, at large conductances G0G_0 and low TT (but outside the instanton-dominated regime) the interaction correction to G0G_0 saturates and causes conductance suppression by a universal factor which depends only on the type of the conductor.Comment: 4 pages, no figure

    Magnetoresistance of n-GaAs at filamentary current flow

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    A large number of sharp structures are observed in the 4.2 K magnetoresistance of n-GaAs biased above impurity breakdown in a regime where current flow is filamentary. Most of the structures cannot be attributed to spectral properties of the semiconductor such as impact excitation of shallow donors or the magnetoimpurity effect. Experimental results give evidence that these structures are caused by a redistribution of the filamentary current flow when one filament border is swept across an imperfection in the material

    Electron transport and current fluctuations in short coherent conductors

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    Employing a real time effective action formalism we analyze electron transport and current fluctuations in comparatively short coherent conductors in the presence of electron-electron interactions. We demonstrate that, while Coulomb interaction tends to suppress electron transport, it may {\it strongly enhance} shot noise in scatterers with highly transparent conducting channels. This effect of excess noise is governed by the Coulomb gap observed in the current-voltage characteristics of such scatterers. We also analyze the frequency dispersion of higher current cumulants and emphasize a direct relation between electron-electron interaction effects and current fluctuations in disordered mesoscopic conductors.Comment: 16 pages, 4 figure

    Persistent current noise and electron-electron interactions

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    We analyze fluctuations of persistent current (PC) produced by a charged quantum particle moving in a ring and interacting with a dissipative environment formed by diffusive electron gas. We demonstrate that in the presence of interactions such PC fluctuations persist down to zero temperature. In the case of weak interactions and/or sufficiently small values of the ring radius RR PC noise remains coherent and can be tuned by external magnetic flux Φx\Phi_x piercing the ring. In the opposite limit of strong interactions and/or large values of RR fluctuations in the electronic bath strongly suppress quantum coherence of the particle down to T=0T=0 and induce incoherent Φx\Phi_x-independent current noise in the ring which persists even at Φx=0\Phi_x=0 when the average PC is absent.Comment: 12 pages, 8 figure

    Charge Fluctuations in the Single Electron Box

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    Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective charging energy in third order in the tunneling conductance. Near the degeneracy point where the energy of two charge states coincides, the perturbative approach fails, and we explicitly resum the leading logarithmic divergencies to all orders. The predictions for zero temperature are compared with Monte Carlo data and with recent renormalization group results. While good agreement between the third order result and numerical data justifies the perturbative approach in most of the parameter regime relevant experimentally, near the degeneracy point and at zero temperature the resummation is shown to be insufficient to describe strong tunneling effects quantitatively. We also determine the charge noise spectrum employing a projection operator technique. Former perturbative and semiclassical results are extended by the approach.Comment: 20 pages, 15 figure

    Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions

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    Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance Rqh/e225.8R_{\rm q}\equiv h/e^2\approx 25.8 kΩ\Omega) have been studied experimentally and theoretically. Our experimental data demonstrate that -- in agreement with previous results on single- and double-junction systems -- Coulomb blockade effects survive even in the strong tunneling regime and are still clearly visible for junction resistances as low as 1 kΩ\Omega. We have developed a quasiclassical theory of electron transport in junction arrays in the strong tunneling regime. Good agreement between the predictions of this theory and the experimental data has been observed. We also show that, due to both heating effects and a relatively large correction to the linear relation between the half-width of the conductance dip around zero bias voltage, V1/2V_{1/2}, and the measured electronic temperature, such arrays are inferior to those conventionally used in the Coulomb Blockade Thermometry (CBT). Still, the desired correction to the half-width, ΔV1/2\Delta V_{1/2}, can be determined rather easily and it is proportional to the magnitude of the conductance dip around zero bias voltage, ΔG\Delta G. The constant of proportionality is a function of the ratio of the junction and quantum resistances, R/RqR/R_{\rm q}, and it is a pure strong tunneling effect.Comment: LaTeX file + five postscript figure