1,789 research outputs found

    CMS Pixel Telescope Addition to T-980 Bent Crystal Collimation Experiment at the Tevatron

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    An enhancement to the T-980 bent crystal collimation experiment at the Tevatron has been completed. The enhancement was the installation of a pixel telescope inside the vacuum-sealed beam pipe of the Tevatron. The telescope is comprised of six CMS PSI46 pixel plaquettes, arranged as three stations of horizontal and vertical planes, with the CAPTAN system for data acquisition and control. The purpose of the pixel telescope is to measure beam profiles produced by bent crystals under various conditions. The telescope electronics inside the beam pipe initially were not adequately shielded from the image current of the passing beams. A new shielding approach was devised and installed, which resolved the problem. The noise issues encountered and the mitigating techniques are presented herein, as well as some preliminary results from the telescope.Comment: 9 pp. 2nd International Conference on Technology and Instrumentation in Particle Physics 2011: TIPP 2011. 9-14 Jun 2011. Chicago, Illinoi

    A Test Stand System for High-Energy Physics Applications

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    The Front-End R&D group at Fermilab has been developing pixel hybridized modules and silicon strip detectors for the past decade for high-energy physics experiments. To accomplish this goal, one of the activities the group has been working on includes the development of a flexible high-speed and high-bandwidth data acquisition and test system to characterize front-end electronics. In this paper, we present a general purpose PCI-based test stand system developed to meet the stringent requirements of testing silicon strip and pixel detectors. The test stand is based on a platform that is flexible enough to be adapted to different types of front-end electronics. This system has been used to test the performance of the electronics for different experiments such as BTeV, CDF, CMS, and Phenix. The paper presents the capabilities of the system and how it can be adapted to meet the testing requirements of different applications

    An application using micro TCA for real-time event assembly

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    Radiation tolerance of the CMS forward pixel detector

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    In this paper we present some results on the radiation tolerance of the CMS forward pixel detector. They were obtained from a beam test at Fermilab of a pixel-detector module, which was previously irradiated up to a maximum dose of 45 Mrad of protons at 200 MeV. It is shown that CMS forward pixel detector can tolerate this radiation dose without any major deterioration of its performance. © 2008 Elsevier B.V

    Measurement of the Forward-Backward Asymmetry in the B -> K(*) mu+ mu- Decay and First Observation of the Bs -> phi mu+ mu- Decay

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    We reconstruct the rare decays B+→K+μ+μ−B^+ \to K^+\mu^+\mu^-, B0→K∗(892)0μ+μ−B^0 \to K^{*}(892)^0\mu^+\mu^-, and Bs0→ϕ(1020)μ+μ−B^0_s \to \phi(1020)\mu^+\mu^- in a data sample corresponding to 4.4fb−14.4 {\rm fb^{-1}} collected in ppˉp\bar{p} collisions at s=1.96TeV\sqrt{s}=1.96 {\rm TeV} by the CDF II detector at the Fermilab Tevatron Collider. Using 121±16121 \pm 16 B+→K+μ+μ−B^+ \to K^+\mu^+\mu^- and 101±12101 \pm 12 B0→K∗0μ+μ−B^0 \to K^{*0}\mu^+\mu^- decays we report the branching ratios. In addition, we report the measurement of the differential branching ratio and the muon forward-backward asymmetry in the B+B^+ and B0B^0 decay modes, and the K∗0K^{*0} longitudinal polarization in the B0B^0 decay mode with respect to the squared dimuon mass. These are consistent with the theoretical prediction from the standard model, and most recent determinations from other experiments and of comparable accuracy. We also report the first observation of the Bs0→ϕμ+μ−decayandmeasureitsbranchingratioB^0_s \to \phi\mu^+\mu^- decay and measure its branching ratio {\mathcal{B}}(B^0_s \to \phi\mu^+\mu^-) = [1.44 \pm 0.33 \pm 0.46] \times 10^{-6}using using 27 \pm 6signalevents.Thisiscurrentlythemostrare signal events. This is currently the most rare B^0_s$ decay observed.Comment: 7 pages, 2 figures, 3 tables. Submitted to Phys. Rev. Let

    Search for a New Heavy Gauge Boson Wprime with Electron + missing ET Event Signature in ppbar collisions at sqrt(s)=1.96 TeV

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    We present a search for a new heavy charged vector boson W′W^\prime decaying to an electron-neutrino pair in ppˉp\bar{p} collisions at a center-of-mass energy of 1.96\unit{TeV}. The data were collected with the CDF II detector and correspond to an integrated luminosity of 5.3\unit{fb}^{-1}. No significant excess above the standard model expectation is observed and we set upper limits on σ⋅B(W′→eν)\sigma\cdot{\cal B}(W^\prime\to e\nu). Assuming standard model couplings to fermions and the neutrino from the W′W^\prime boson decay to be light, we exclude a W′W^\prime boson with mass less than 1.12\unit{TeV/}c^2 at the 95\unit{%} confidence level.Comment: 7 pages, 2 figures Submitted to PR

    Measurements of the properties of Lambda_c(2595), Lambda_c(2625), Sigma_c(2455), and Sigma_c(2520) baryons

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    We report measurements of the resonance properties of Lambda_c(2595)+ and Lambda_c(2625)+ baryons in their decays to Lambda_c+ pi+ pi- as well as Sigma_c(2455)++,0 and Sigma_c(2520)++,0 baryons in their decays to Lambda_c+ pi+/- final states. These measurements are performed using data corresponding to 5.2/fb of integrated luminosity from ppbar collisions at sqrt(s) = 1.96 TeV, collected with the CDF II detector at the Fermilab Tevatron. Exploiting the largest available charmed baryon sample, we measure masses and decay widths with uncertainties comparable to the world averages for Sigma_c states, and significantly smaller uncertainties than the world averages for excited Lambda_c+ states.Comment: added one reference and one table, changed order of figures, 17 pages, 15 figure

    Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

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    The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm–2s–1 and collect ~ 3000fb–1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented
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