A HISTORICAL APPROACH FOR UNDERSTANDING AYURVEDA

Ayurveda is the traditional system of Indian medicine and being historical, linguistic, religious, philosophical importance of Ayurveda, it is very necessary to do critical study of Ayurveda according to ancient Indias history, Prakrita, Pali (Magdhi), Ardhamagdhi languages, religious and philosophical point of view. It is prejudice to compare Ayurveda with the modern science. First, we should try to know what is Ayurveda? It is considered as science of life but what is the meaning of science according to Indian philosophy? Ayurveda is considered as the philosophy as well as clinical science also. The two main distinctions of Indian philosophy – the believer (i.e. Sankhya, Yog, Nyaya, Vaisheshika, Purva Mimansa, Uttar Mimansa) and the atheist (i.e. Charvaka, Jain and Baudha) philosophy. Unless and until we have the deep knowledge of Indian philosophical sciences i.e. Darshan Shastras (Aastika and Naastika), we wont be able to understand Ayurveda properly. Therefore, it is the need of time to do critical study of Darshan Shastras (Aastika and Naastika) and it is to be noted that with the help of Sanskrita language alone we wont be able to achieve our goal; it is very much important to have the knowledge of languages such as Prakrit, Pali which is also known as Magadhi and Ardhamagdhi, then only we could be able to understand the proper meanings of Darshan Shastras (Aastika and Naastika); Buddhist literature is available in the Pali language which is also known as Magdhi; it was the dialect of ancient north India, and Ardhamagdhi is the language in which Jain literature is available. This research paper is an attempt to review the Ayurveda literature regarding historical facts and what are the means so that we could able to understand Ayurveda appropriately.

Modeling and Characterization of 4H-SIC MOSFETs: High Field, High Temperature, and Transient Effects

We present detailed physics based numerical models for characterizing 4H-Silicon Carbide lateral MOSFETs and vertical power DMOSFETs for high temperature, high field, DC, AC and transient switching operating conditions. A complete 2-D Drift-Diffusion based device simulator has been developed specifically for SiC MOSFETs, to evaluate device performance in a variety of operating scenarios, and to extract relevant physical parameters. We have developed and implemented room and high temperature mobility models for bulk phonon and impurity scattering, surface phonon scattering, Coulomb scattering from interface traps, and surface roughness scattering. High temperature models for interface trap density of states and occupation probability of interface traps are also implemented. By rigorous comparison of simulated I-V characteristics to experimental data at high temperatures, physical parameters like interface trap density of states, surface step height, saturation velocity, etc. have been extracted. Insight into relative importance of scattering mechanisms influencing transport in SiC MOSFETs has been provided. We show that the strongest contribution to low current in SiC MOSFETs is from the loss of mobile inversion charge due to large amount of trapping at the interface, and due to very low surface mobility arising due to a rough SiC-SiO2 interface. We show that surface roughness scattering dominates at high gate biases and is the most important scattering mechanism in 4H-SiC MOSFETs. Switching characteristics of SiC lateral MOSFETs have been modeled and simulated using our custom device simulator. A comprehensive generation-recombination model for interaction between inversion layer electrons and interface traps has been developed. Using this model, we have modeled the time-dependent occupation of interface traps spread inside the SiC bandgap. We have measured the transient characteristics of these devices, and compare our simulation to experiment and have extracted capture cross-sections of interface traps. Using the coupled experiment and modeling approach, we are able to distinguish between fast interface traps and slow oxide traps, and explain how they contribute to threshold voltage instability. High power 4H-SiC DMOSFET operation in the ON and the OFF states has also been analyzed. We show that in current generation SiC DMOSFETs, the ON resistance is dominated by the channel resistance instead of the drift-layer resistance. This makes the design of SiC DMOSFETs far from ideal. OFF state blocking capability and breakdown due to impact ionization of the DMOSFETs are also modeled and simulated. We show that the 4H-SiC DMOSFETs have excellent leakage characteristics and can support extremely high OFF state drain voltages

Buddhist Councils (Sangiti) and its Literature: A Review

There are two main philosophical sciences in India; atheistic (Charavka, Jain and Bauddha) and theist (Sankhya, Yoga, Nyaya, Vaishehika, Purva mimansa and Uttar mimansa). In India, abundant literatures of philosophical sciences are available except Buddhist literature and the reasons are unknown. Buddhist literatures were in Pali language which was a dialect of ancient India and to preserve the invaluable teaching of the Buddha, till dated six Councils (Shangiti) were convened out of which three councils were assembled in ancient India. It is said that the knowledge of history of Indian culture is incomplete without the knowledge of Pali literature. Ayurveda is a Darshanshashtra (Philosophy) as well as clinical science having the goal of Moksha. Every Darshanshashtra has its goal to achieve the Moksha. Aastika and Nastika darshanshashtras have their influence on Ayurveda. The purpose of this paper is to know about the Buddhist councils along with at least appellations of the Buddhist literature

Characterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulation

Detailed analysis of a 4H-SiC MOSFET has been carried out by numerically solving the steady state semiconductor Drift-Diffusion equations. Mobility models for bulk phonon scattering, surface phonon scattering, surface roughness scattering, Coulomb scattering by interface traps and oxide charges, and high field effects, have been developed and implemented. A first principles Coulomb scattering mobility model has been developed specifically to model the physics of the inversion layer in 4H-SiC MOSFETs. The Coulomb scattering model takes into account, scattering of mobile charges by occupied interface traps and fixed oxide charges, distribution of mobile charges in the inversion layer, and screening. Simulated IV curves have been compared to experimental data. Density of states for the interface traps have been extracted, and seem to be in agreement with experimental measurements. Simulations indicate that occupied interface traps in 4H-SiC MOSFETs are responsible for mobility degradation, low currents and high threshold voltages. Their effect diminishes at high temperatures due to reduction in trap occupancy, and at high gate voltages due to increased screening. At high gate voltages, surface roughness scattering plays the major role in mobility degradation in 4H-SiC MOSFETs

The Effect of Powder Blend on Drug Release Mechanisms of Hydrophobic Starch Stearate Matrix Tablets

Free hydroxyl groups of glucose monomer of starch substituted with steroyl group by chemical modification leads to the formation of starch stearate (SS). Modification changes the nature from hydrophilic to hydrophobic and thus used as controlled release excipient. In present study, SS was evaluated as release modifying polymer and MCC, Lactose, Dicalcium phosphate (DCP) and combinations of these were used to evaluate effect on drug release of Verapamil hydrochloride (VH) and Diclofenac sodium (DS). FT-IR studies of polymer with VH and DS have shown no significant drug:polymer interactions. Decrease in in-vitro drug dissolution was observed with increase in polymer concentration. Cumulative drug released for DS (hydrophobic) was more sustained than hydrophilic drug (VH). Drug release from formulations containing 30%w/w of SS after 8h was 81.61 (for VH) and 25.08% (for DS). DCP retarded drug release more when used alone. After 8h % drug release from formulations containing 30%w/w of SS was 49.86 (VH) and 24.19 (DS). The use of lactose alone increased the drug release and combination of DCP:Lactose in equal proportion with 15 %w/w SS sustained more i.e. 42.62% (VH) drug release at the end of 8h

Expression of G-protein Coupled Receptors in Young and Mature Thrombocytes and Knockdown of Gpr18 in Zebrafish

In this study, a novel method based on biotinylated antibodies and streptavidin coated magnetic beads was used to separate the thrombocyte subpopulations from zebrafish whole blood. DiI-C18, a lipophilic dye, labels only young thrombocytes when used at low concentrations. Commercially available biotinylated anti-Cy3 antibody was used to label the chromophore of DiI-C18 on the young thrombocytes and streptavidin coated magnetic beads were added subsequently, to separate young thrombocytes. The remaining blood cells were probed with custom-made biotinylated anti-GPIIb antibody and streptavidin magnetic beads to separate them from other cells. Further, thrombocytes are equivalents of mammalian platelets. Platelets play a crucial role in thrombus formation. The G-protein coupled receptors (GPCRs) present on the platelet surface are involved during platelet activation and aggregation processes. So, thrombocytes were studied for the presence of GPCRs. The GPCR mRNA transcripts expressed in the young and mature thrombocytes were subjected to densitometry analysis and pixel intensities of the bands were compared using one way ANOVA. This analysis did not show significant differences between the young and mature GPCR mRNA transcripts but identified a novel GPCR, GPR18 that was not reported in platelets earlier. To study the function of this GPCR, it was knocked down using GPR18 specific antisense morpholino and vivo morpholino. The immunofluorescence experiment indicated the presence of GPR18 on thrombocytes. The results of the assays, such as, time to occlusion (TTO) and time to aggregation (TTA) in response to N-arachidonyl glycine (NAG) as an agonist, showed prolongation of time in GPR18 larval and adult morphants respectively, suggesting that GPR18 plays a role in thrombus formation in zebrafish. In conclusion, our results indicate that GPR18 may be present in zebrafish thrombocytes, it may be involved in thrombus formation and that NAG may be an agonist at GPR18 on thrombocytes

EVALUATION OF GUM SANDARAC AS A NOVEL RELEASE CONTROLLING POLYMER FOR SUSTAINED RELEASE MATRIX PELLETS

Sustained release, prolonged action, extended action are the terms used to identify drug delivery system that are designed to achieve prolong therapeutic effect by continuously releasing medication over an extended period of time after administration of a single dose. Matrix systems, because of their ease of manufacture, their flexibility to obtain a desirable drug release profile, cost effectiveness, and broad regulatory acceptance are preferred for formulating these dosage forms. Polymers are the most important part in any type of release modified formulations. Predominantly hydrophobic materials are widely used to fabricate the matrix systems. Various materials are being investigated as polymers as there is scarcity of good polymeric materials to be used in pharmaceutical products. The present study was aimed at evaluating novel natural material gum sandarac, a resin obtained by incision from the stem of Callitris quadrivalvis, Ventenat (N.O. Coniferae) Pinaceae as a hydrophobic matrixing material for developing coated pellets for sustained release of drug and comparing it with well known ethyl cellulose as hydrophobic polymeric material

Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures