182 research outputs found

    Characterization of polybenzimidazole (PBI) film at high temperatures

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    Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric

    Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

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    A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space

    Evaluation of a Programmable Voltage-Controlled MEMS Oscillator, Type SiT3701, Over a Wide Temperature Range

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    Semiconductor chips based on MEMS (Micro-Electro-Mechanical Systems) technology, such as sensors, transducers, and actuators, are becoming widely used in today s electronics due to their high performance, low power consumption, tolerance to shock and vibration, and immunity to electro-static discharge. In addition, the MEMS fabrication process allows for the miniaturization of individual chips as well as the integration of various electronic circuits into one module, such as system-on-a-chip. These measures would simplify overall system design, reduce parts count and interface, improve reliability, and reduce cost; and they would meet requirements of systems destined for use in space exploration missions. In this work, the performance of a recently-developed MEMS voltage-controlled oscillator was evaluated under a wide temperature range. Operation of this new commercial-off-the-shelf (COTS) device was also assessed under thermal cycling to address some operational conditions of the space environmen

    Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

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    Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions

    Operation of a New COTS Crystal Oscillator - CXOMHT over a Wide Temperature Range

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    Crystal oscillators are extensively used in electronic circuits to provide timing or clocking signals in data acquisition, communications links, and control systems, to name a few. They are affordable, small in size, and reliable. Because of the inherent characteristics of the crystal, the oscillator usually exhibits extreme accuracy in its output frequency within the intrinsic crystal stability. Stability of the frequency could be affected under varying load levels or other operational conditions. Temperature is one of those important factors that influence the frequency stability of an oscillator; as it does to the functionality of other electronic components. Electronics designed for use in NASA deep space and planetary exploration missions are expected to be exposed to extreme temperatures and thermal cycling over a wide range. Thus, it is important to design and develop circuits that are able to operate efficiently and reliably under in these harsh temperature environments. Most of the commercial-off-the-shelf (COTS) devices are very limited in terms of their specified operational temperature while very few custom-made commercial and military-grade parts have the ability to operate in a slightly wider range of temperature than those of the COTS parts. These parts are usually designed for operation under one temperature extreme, i.e. hot or cold, and do not address the wide swing in the operational temperature, which is typical of the space environment. For safe and successful space missions, electronic systems must therefore be designed not only to withstand the extreme temperature exposure but also to operate efficiently and reliably. This report presents the results obtained on the evaluation of a new COTS crystal oscillator under extreme temperatures

    Stability of a Crystal Oscillator, Type Si530, Inside and Beyond its Specified Operating Temperature Range

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    Data acquisition and control systems depend on timing signals for proper operation and required accuracy. These clocked signals are typically provided by some form of an oscillator set to produce a repetitive, defined signal at a given frequency. Crystal oscillators are commonly used because they are less expensive, smaller, and more reliable than other types of oscillators. Because of the inherent characteristics of the crystal, the oscillators exhibit excellent frequency stability within the specified range of operational temperature. In some cases, however, some compensation techniques are adopted to further improve the thermal stability of a crystal oscillator. Very limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) crystal oscillators at temperatures beyond the manufacturer's specified operating temperature range. This information is very crucial if any of these parts were to be used in circuits designed for use in space exploration missions where extreme temperature swings and thermal cycling are encountered. This report presents the results of the work obtained on the operation of Silicon Laboratories crystal oscillator, type Si530, under specified and extreme ambient temperatures

    Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

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    Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated

    Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

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    Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions

    Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

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    The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed

    Test Results of Selected Commercial DC/DC Converters under Cryogenic Temperatures - A Digest

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    DC/DC converters are widely used in space power systems in the areas of power management and distribution, signal conditioning, and motor control. Design of DC/DC converters to survive cryogenic temperatures will improve the power system performance, simplify design, and reduce development and launch costs. In this work, the performance of nine COTS modular, low-tomedium power DC/DC converters was investigated under cryogenic temperatures. The converters were evaluated in terms of their output regulation, efficiency, and input and output currents. At a given temperature, these properties were obtained at various input voltages and at different load levels. A summary on the performance of the tested converters was given. More comprehensive testing and in-depth analysis of performance under long-term exposure to extreme temperatures are deemed necessary to establish the suitability of these and other devices for use in the harsh environment of space exploration missions
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