4,330 research outputs found

    Highly segmented thin microstrip detector with data-driven fast readout

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    In September 2008 the Slim5 collaboration submitted a low material budget silicon demonstrator to test with 12 GeV/c protons, at the PS-T9 test-beam at CERN. Inside the reference telescope, two different detectors were placed as device under test (DUT). The first was a 4k-Pixel Matrix of Deep N Well MAPS, developed in a 130 nm CMOS Technology, providing digital sparsified readout. The other one was a high resistivity double sided silicon detector, with short strips at 45-degree angle to the detector's edge, read out by the FSSR2 chip. The FSSR2 is a 128 channel data-driven fast readout chip developed by Fermilab and INFN. In this paper we describe the main features of latter sensor, the striplet. The primary goal of the test was to measure the efficiency and the resolution of the striplets. The data-driven approach of the FSSR2 readout chips has been fully exploited by the DAQ system.Comment: 3 pages, 4 figures, Contributed to The 1st international conference on Technology and Instrumentation in Particle Physics, TIPP09, Tsukuba, 12/03/2009-17/03/200

    Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

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    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.Comment: 6 pages, 13 figures, to appear in the proceedings of the 2013 Nuclear Science Symposium and Medical Imaging Conference. arXiv admin note: text overlap with arXiv:1311.162

    Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

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    The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of 1×1015neq/cm21 \times 10^{15} {\rm n_{eq}}/{\rm cm}^2 comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb−1^{-1}) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.Comment: 20 pages, 9 figures, submitted to Nucl. Instr. and Meth.

    Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

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    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.Comment: 9 pages, 9 figures, to appear in the proceedings of the 15th International Workshops on Radiation Imaging Detector

    Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

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    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.Comment: 6 pages, 5 figures, to appear in the proceedings of the 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Device

    Measurement of beta in B decays to charm and charmonium in BABAR

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    In this article we will review recent BABAR measurements of Unitarity Triangle angle beta in B meson decays to charm and charmonium.Comment: 3 pages, 1 postscript figues, contributed to the Proceedings of EPS-HEP200

    The experience of dysgeusia in allogenic hematopoietic cell transplantation survivors: A qualitative study

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    Background: Taste disorders are one of the most common side effects of treatment in oncology patients and often occur after allogeneic hematopoietic cell transplantation (allo-HCT). Dysgeusia is rarely a life-threatening complication, therefore, in many cases it does not receive close medical attention. Furthermore, information about this disorder is largely based on the clinician’s own experience. However, taste disorders, can impact on the quality of life in survivors of allo-HCT, and compromise their enjoyment of eating, food intake, weight and nutritional status. The number of performed annual transplantations continues to grow annually and the number of older long-term survivors increases. There is little literature that is focused on studies of survivors of allo-HCT with taste disorders. We conducted a qualitative descriptive study to explore experiences of dysgeusia in patients that have undergone of allo-HCT and examined what strategies they used to mitigate it. Methods: Using purposive sampling, survivors of allo-HCT were recruited. Audiotape interviews were conducted until data saturation was achieved. Each interview was transcribed verbatim, and content analyses were performed to extract significant themes and subthemes. Results: Three major themes embracing various aspects of allo-HCT survivors’ experiences were identified: 1) the shape of taste; 2) everything is irritating and it is arduous to eat; 3) finding new strategies to overcome the problems. Together, they highlight the experiences of survivors showing how taste disorders can affect the physical, psychological and social dimensions of a person for the rest of their life. Conclusions: A cumulative burden is the result of dysgeusia and its clinical course reinforced also by related symptoms. Healthcare professionals must focus their attention on the management of these symptoms and offer interventions to safeguard the patient’s social, physical and psychological well-being. Finally, further research is needed to explore the experiences of allo-HTC patients who have taste disorders throughout their cancer journey that introduces a more holistic approach which involves health professionals, caregivers and family members
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