20 research outputs found

    Fully gravure and ink-jet printed high speed pBTTT organic thin film transistors

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    Organic thin film transistors with channel lengths below 20 mu m have been fabricated on plastic substrates using a combination of rotogravure and ink-jet printing exclusively. Gravure is utilized to deposit thin, smooth, and narrow metal lines ideal for gate electrodes; a poly(4-vinylphenol) dielectric; and a poly(2,5-bis(3-tetradecylthiophene-2-yl) thieno[3,2-b]thiophene) (pBTTT) semiconductor using a heated roll. A novel fluid guiding technique is used to maintain closely spaced ink-jet printed source and drain (S/D) contacts. Together these printing processes yield aggressively scaled yet easily manufacturable TFTs with operating frequencies of 18 kHz. (C) 2010 Elsevier B. V. All rights reserved.N

    High-Speed Printing of Transistors: From Inks to Devices

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    The realization of a high-speed printing technique with high resolution and pattern fidelity is critical to making printed electronics a viable technology for electronics manufacturing. The printing requirements of printed electronics are substantially different that those of graphic arts. To make printed electronics a reality, it is necessary to deliver high resolution, good reproducibility, excellent pattern fidelity, high process throughput, and compatibility with the requisite semiconductor, dielectric, and conductor inks. In this paper, we review the physics of pattern formation from pixelated primitives, such as those that exist during inkjet and gravure printing, and will show how control of drop merging and drying can be used to produce high-fidelity shapes, including lines, squares, and intersections. We additionally discuss the physical underpinnings of gravure printing and inkjet printing, and show how these techniques can be scaled to produce high-fidelity highly scaled patterns, including sub-2 micron features at printing speeds of similar to 1 m/s. Finally, in conjunction with high-performance materials, we describe our realization of high-performance fully printed transistors on plastic, offering high-switching speed, excellent process throughput, and good fidelity over large areas.Y

    Printed Transistors on Paper: Towards Smart Consumer Product Packaging

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    The integration of fully printed transistors on low cost paper substrates compatible with roll-to-roll processes is demonstrated here. Printed electronics promises to enable a range of technologies on paper including printed sensors, RF tags, and displays. However, progress has been slow due to the paper roughness and ink absorption. This is solved here by employing gravure printing to print local smoothing pads that also act as an absorption barrier. This innovative local smoothing process retains desirable paper properties such as foldability, breathability, and biodegradability outside of electronically active areas. Atomic force microscopy measurements show significant improvements in roughness. The polymer ink and printing parameters are optimized to minimize ink absorption and printing artifacts when printing the smoothing layer. Organic thin film transistors (OTFT) are fabricated on top of this locally smoothed paper. OTFTs exhibit performance on par with previously reported printed transistors on plastic utilizing the same materials system (pBTTT semiconductor, poly-4-vinylphenol dielectric). OTFTs deliver saturation mobility approaching 0.1 cm(2) V-1 s(-1) and on-off-ratio of 3.2 x 10(4). This attests to the quality of the local smoothing, and points to a promising path for realizing electronics on paper.N

    Supporting Data: Complementary Organic Logic Gates on Plastic Formed by Self-Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors

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    The file contains the supporting data for the publication: S.G. Higgins, B.V.O. Muir, G. Dell'Erba, A. Perinot, M. Caironi, A.J. Campbell. Complementary Organic Logic Gates on Plastic Formed by Self-Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors. doi: 10.1002/aelm.201500272. Advanced Electronic Materials (2015) See 'README.txt' for a description of the contents of the compressed file.The file contains the supporting data for the publication: S.G. Higgins, B.V.O. Muir, G. Dell'Erba, A. Perinot, M. Caironi, A.J. Campbell. Complementary Organic Logic Gates on Plastic Formed by Self-Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors. doi: 10.1002/aelm.201500272. Advanced Electronic Materials (2015) See 'README.txt' for a description of the contents of the compressed file
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