On-chip hybrid integration of silicon nitride microdisk with colloidal quantum dots

We report on the fabrication of on-chip freestanding silicon nitride microdisks hybridly integrated with embedded colloidal quantum dots. An efficient coupling of quantum dot emission to resonant disk modes in the visible range is demonstrated

Colloidal quantum dots enabling coherent light sources for integrated silicon-nitride photonics

Integrated photoniccircuits, increasingly based on silicon (-nitride), are at the core of the next generation of low-cost, energy efficient optical devices ranging from on-chip interconnects to biosensors. One of the main bottlenecks in developing such components is that of implementing sufficient functionalities on the often passive backbone, such as light emission and amplification. A possible route is that of hybridization where a new material is combined with the existing framework to provide a desired functionality. Here, we present a detailed design flow for the hybridization of silicon nitride-based integrated photonic circuits with so-called colloidal quantum dots (QDs). QDs are nanometer sized pieces of semiconductor crystals obtained in a colloidal dispersion which are able to absorb, emit, and amplify light in a wide spectral region. Moreover, theycombine cost-effective solution based deposition methods, ambient stability, and low fabrication cost. Starting from the linear and nonlinear material properties obtained on the starting colloidal dispersions, we can predict and evaluate thin film and device performance, which we demonstrate through characterization of the first on-chip QD-based laser

Progress towards on-chip single photon sources based on colloidal quantum dots in silicon nitride devices

New results on integration of colloidal quantum dots (QDs) into SiN microstructures are reported, including QD positioning with nanometric accuracy and the efficient coupling of their emission to waveguides and cavities. The results are relevant to on-chip quantum optics and information processing

RESEARCH AND APPLICATION OF U-BIT CONSTRUCTION METHOD IN SUBWAY STATION ENGINEERING LOCATED IN SATURATED SOFT SOIL AREA

In order to solve the problems existing in the construction of underground structures located in the downtown of saturated soft soil area, such as insufficient construction site, complex adjacent structures and great impact on the surrounding environment, the construction method of underground bundled integrate tunnel(U-BIT) is proposed. In this method, after steel pipes jacking completed, concrete is filled into the pipes, and prestress is tensioned to make each independent pipe combined to form a whole bearing structure, so as to achieve the purpose of reducing the size of structural components, improving the structural stiffness and bearing capacity. Based on the structural mechanical properties test and the project of Wuding Road Station of Shanghai Metro Line 14, the failure mechanism of bundled integrate structure, the tension technology of prestressed tendons in narrow space and the variation rules of ground surface subsidence are systematically studied. The research shows that structural seam sections will be destroyed before pipe sections, so ensuring the mechanical performance of seam sections is very important to make sure the structural safety. Since each independent pipe is combined to form an overall stable structure under the prestress effect, the subsequent soil excavation has little influence on the tension of prestressed tendons and ground surface deformation. Therefore, the above construction method can control the ground surface subsidence effectively and reduce the influence of underground engineering construction on the surrounding environment.  &nbsp