1 research outputs found
Controllability of the Conductive Filament in Porous SiO<sub><i>x</i></sub> Memristors by Humidity-Mediated Silver Ion Migration
Oxide-based memristors composed of Ag/porous SiOx/Si stacks are fabricated using different
etching time durations
between 0 and 90 s, and the memristive properties are analyzed in
the relative humidity (RH) range of 30–60%. The combination
of humidity and porous structure provides binding sites to control
silver filament formation with a confined nanoscale channel. The memristive
properties of devices show high on/off ratios up to 108 and a dispersion coefficient of 0.1% of the high resistance state
(CHRS) when the RH increases to 60%. Humidity-mediated
silver ion migration in the porous SiOx memristors is investigated, and the mechanism leading to the synergistic
effects between the porous structure and environmental humidity is
elucidated. The artificial neural network constructed theoretically
shows that the recognition rate increases from 60.9 to 85.29% in the
RH range of 30–60%. The results and theoretical understanding
provide insights into the design and optimization of oxide-based memristors
in neuromorphic computing applications