Emergence of Improper Electronic Ferroelectricity and Flat Band in Twisted Bilayer Tl₂S

Two-dimensional (2D) ferroelectrics possessing out-of-plane (OP) polarization are highly desirable for applications and fundamental physics. Here, by first-principles calculations, we reveal that large-angle interlayer twisting can efficiently stabilize an unexpected ordering of sizable electric dipoles, producing OP polarization out of the centrosymmetric ground-state structure of Tl2S, in great contrast to the recently proposed interlayer-sliding ferroelectricity. The ferroelectricity originates from a nonlinear coupling between a polar order dominantly contributed by electrons and an unstable phonon mode associated with a commensurate k point (1/3, 1/3, 0) in the two constituent monolayers, therefore indicating an improper and electronic ferroelectric nature. More interestingly, a flat band and a van Hove singularity occur in its electronic structures just below the Fermi level in the large-angle twisted bilayer Tl2S. The unusual coexistence of improper electronic ferroelectricity, a flat band, and a van Hove singularity in one 2D material offers exceptional opportunities for exploring novel physics and applications

Electronic Properties of Electrical Vortices in Ferroelectric Nanocomposites from Large-Scale Ab Initio Computations

An original ab initio procedure is developed and applied to a ferroelectric nanocomposite, in order to reveal the effect of electrical vortices on electronic properties. Such procedure involves the combination of two large-scale numerical schemes, namely, the effective Hamiltonian (to incorporate ionic degrees of freedom) and the linear-scaling three-dimensional fragment method (to treat electronic degrees of freedom). The use of such procedure sheds some light into the origin of the recently observed current that is activated at rather low voltages in systems possessing electrical vortices. It also reveals a novel electronic phenomena that is a systematic control of the type of the band-alignment (i.e., type I versus type II) within the same material via the temperature-driven annihilation/formation of electrical topological defects