Pressure-induced electronic topological transition and superconductivity in topological insulator Bi2Te2.1Se0.9

Great attention has been drawn to topological superconductivity due to its potential application in topological quantum computing. Meanwhile, pressure is regarded as a powerful tool for tuning electronic structure and even inducing superconductivity in topological insulators. As a well-defined topological insulator, Bi2Te2.1Se0.9 can be a suitable candidate to search for topological superconductivity and study its intrinsic property. In this paper, we report the occurrence of superconductivity and electronic topological transition (ETT) in Bi2Te2.1Se0.9 with applied pressure. Superconductivity can be observed at 2.4 GPa with the Tconset around 6.6 K in Bi2Te2.1Se0.9 by resistance measurement, and the corresponding structure resolved by X-ray diffraction and Raman experiments doesn't change below the pressure of 8.4 GPa. Moreover, at about 3.0 GPa, the abnormal changes of c/a as well as the full width at half maximum (FWHM) of mode indicate the occurrence of electronic topological transition (ETT). These results indicate that superconductivity can be realized in doped topological insulator Bi2Te2.1Se0.9 in the low-pressure rhombohedral phase

Mobile Tracking Based on Support Vector Regressors Ensemble and Game Theory

A two-step tracking strategy is proposed to mitigate the adverse effect of non-line-of-sight (NLOS) propagation to the mobile node tracking. This strategy firstly uses support vector regressors ensemble (SVRM) to establish the mapping of node position to radio parameters by supervising learning. Then by modelling the noise as the adversary of position estimator, a game between position estimator and noise is constructed. After that the position estimation from SVRM is smoothed by game theory. Simulations show that the proposed strategy results in the more accurate performance, especially in the harsh environment

Evaluation and Optimization of Human Resource Supply in Packaging Design Project

In order to solve the problem of selection of human resource provider for the demander in package design project, firstly, the evaluation index system of provide side is established, and the entropy weight method is used to calculate the objective weight of the evaluation index; secondly, the subjective weight is solved by the five scale valuation method, and the comprehensive weight with subjective and objective significance is obtained; then, with the help of the ideal point method, the provide side is evaluated, which can provide a reference for the choice of the demander; finally, an example is given to verify the effectiveness and practicability of the method

Chromaticity-Tunable and Thermal Stable Phosphor-in-Glass Inorganic Color Converter for High Power Warm w-LEDs

In this work, an aluminate silicate garnet phosphor, Y2Mg2Al2Si2O12:Ce3+ (YMASG:Ce3+), exhibiting strong and broad yellow-orange emission, was successfully synthesized. Attributed to the double cation substitution of YAG:Ce3+, which led to a compression effect, a redshift was observed with respect to YAG:Ce3+. More importantly, a transparent phosphor-in-glass (PiG) sample was obtained by incorporating the phosphor YMASG:Ce3+ into a special low-melting precursor glass. The energy dispersive spectrometer (EDS) mapping analysis of the as-prepared PiG sample indicates that YMASG:Ce3+ was successfully incorporated into the glass host, and its powders were uniformly distributed in glass. The photoluminescence intensity of the PiG sample was higher than that of the powder due to its relatively high thermal conductivity. Additionally, the combination of the PiG sample and a blue high-power chip generated a modular white LED with a luminous efficacy of 54.5 lm/W, a correlated color temperature (CCT) of 5274 K, and a color rendering index (CRI) of 79.5 at 350 mA

Correlation of Structure, Tunable Colors, and Lifetimes of (Sr, Ca, Ba)Al2O4:Eu2+, Dy3+ Phosphors

(Sr, Ca, Ba)Al2O4:Eu2+, Dy3+ phosphors were prepared via a high temperature solid-state reaction method. The correlation of phase structure, optical properties and lifetimes of the phosphors are investigated in this work. For the (Sr, Ca)Al2O4:Eu2+,Dy3+ phosphors, the different phase formation from monoclinic SrAl2O4 phase to hexagonal SrAl2O4 phase to monoclinic CaAl2O4 phase was observed when the Ca content increased. The emission color of SrAl2O4:Eu2+, Dy3+ phosphors varied from green to blue. For the (Sr, Ba)Al2O4:Eu2+, Dy3+ phosphors, different phase formation from the monoclinic SrAl2O4 phase to the hexagonal BaAl2O4 phase was observed, along with a shift of emission wavelength from 520 nm to 500 nm. More interestingly, the decay time of SrAl2O4:Eu2+, Dy3+changed due to the different phase formations. Lifetime can be dramatically shortened by the substitution of Sr2+ with Ba2+ cations, resulting in improving the performance of the alternating current light emitting diode (AC-LED). Finally, intense LEDs are successfully obtained by combining these phosphors with Ga(In)N near UV chips

Optical properties of flexible fluorescent films prepared by screen printing technology

In this work, we prepared a fluorescent film comprised phosphors and silicone on flexible polyethylene terephthalate (PET) substrate using a screen printing technology. The effects of mesh number and weight ratio of phosphors to silicone on the optical properties of the flexible films were investigated. The results indicate that the emission intensity of the film increase as the mesh decreased from 400 to 200, but the film surface gradually becomes uneven. The fluorescent film with high emission intensity and smooth surface can be obtained when the weight ratio of phosphor to gel is 2:1, and mesh number is 300. The luminous efficiency of the fabricated LEDs combined the fluorescent films with 460 nm Ga(In)N chip module can reach 75 lm/W. The investigation indicates that the approach can be applied in the remote fluorescent film conversion and decreases the requirements of the particle size and the dispersion state of fluorescent materials