Response Surface Approach to Optical Channel Dropping Filter Design Parameters Optimization

The objective of this paper is to optimise the design parameters for the optical channel dropping filter, which is based on the microring resonator topology. The most important parameters to determine the performance of the microring channel optical filter are the waveguide width, gap, core thickness and ring radius. The determination of parameters by classical experimental design methods requires a large amount of experimental data, which has been found to be costly and time-consuming. To overcome this drawback, a design of experiment (DOE) methods of the Response Surface Methodology (RSM) was employed. This paper employed the RSM design analysis in evaluating the performance of the microring resonator with different design parameters settings. Upon completion, the RSM shows that the optimum condition can be achieved when the ring radius is 5.50μm, a gap of 200nm, waveguide width of 418 nm and core thickness of 220 nm. In conclusion, for optimized performance of the channel dropping filter, design conditions within the range demonstrated in this study are suggested

Modal Interferometer Structures and Splicing Techniques of Fiber Optic Sensor

This paper discusses the properties of modal interference (MI) for fiber optic sensor (FOS). The performances of the devices had been reviewed based on the structures and the splicing techniques. The structures are based on the standard fibers, polarization maintaining fiber (PMF), photonic crystal fiber (PCF) and fiber Bragg grating (FBG). Meanwhile, the splicing techniques can be categorized as the core mode mismatch, offset splicing, waist enlargement and collapse region. This paper also reports the experimental result of core mode mismatch splicing technique of the SMF-SMF and SMF-MMF-SMF. The response of the power received using various operation wavelengths has been examined. At 1530nm operating wavelength, both structures recorded the highest reading of 59.839uW for SMF-MMF and 62.397uw for SMFMMF-SMF

Analyze Of Process Parameter Variance In 19nm Wsi2/Tio2 NMOS Device Using 2k-Factorial Design

This project investigates and analyzes the impact of process parameter variance on the drive current (ION) and leakage current (IOFF) for 19nm WSi2/TiO2 NMOS device using 2k-factorial design. The four process parameter, namely halo implant dose, halo implant energy, source/drain (S/D) implant dose and S/D implant energy will be investigated and adjusted to improve the results. The simulated of the device was performed by using ATHENA module. Meanwhile the electrical characterization of the device was implemented by using ATLAS module. These two modules will be combined with 2kfactorial to aid design and optimize the process parameters. The most effective process parameter with respect ION and IOFF were chosen depending on the percentage of the factor effect on S/N ratio that indicates the relative power of factor to reduce variation. The most dominant or significant factors in S/N Ratio are pocket halo implant dose and S/D implant energy. Meanwhile, the values of ION and IOFF values for 19nm WSi2/SiO2 NMOS device after optimization approaches are 591.38 µA/µm and 2.217 pA/µm respectively. The results obtained are meet the requirement of International Technology Roadmap Semiconductor (ITRS) 2013 prediction