32 research outputs found

    Working in the Public Interest? What must planners do differently? Critical thoughts on the state of planning

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    The current moment is generating huge challenges and raising significant questions about how our societies operate and the future of our cities and countryside. Economic shutdowns are bringing structural inequalities into sharp relief even as they illustrate the daunting scale of the transformations required to reduce our environmental impacts. Many pieces have already been written about how we might not just adapt to a post-Covid world but take the opportunity to build better, healthier, fairer, greener cities. Any hopes for significant change would entail fundamental shifts in the role of planning. At the same time, however, powerful property lobbies threaten a return to a business-as-usual model of development that is led not by care for people and place but the greedy hand of an ever less fettered free market. In England, this is symbolised by a new Conservative government promising to yet again radically streamline a planning system it sees as an impediment to economic recovery. Current circumstances also therefore challenge us to think more broadly about what planning and being a planner really mean in 2020. What is the purpose of planning? Do planners have the tools, resources, and capabilities to address significant societal challenges, and are they trusted to do so? What role should public authorities have and how might this interface with the logics of the market and private-sector driven development? And finally, what is the ‘public interest’ that planners often invoke as the foundation for their work, and how might it be compromised by the nature of the systems we operate in and where we work? The ESRC-funded Working in the Public Interest project has been seeking answers to these questions over the past three years. The project team from the University of Sheffield, Newcastle University and University College London has been engaging closely with contemporary planning practice in both the public and private sectors, focusing attention on what planners do all day. In depth interviews, focus groups to discuss contemporary challenges in planning, and extensive and engaged ethnography have yielded a rich set of insights into the state of planning and the nature of contemporary planning work across the UK. In this booklet we offer a series of brief overviews of key themes that this research has highlighted. Our aim here is not to offer a definition or detailed theoretical discussion of the public interest. Instead we hope to explore how various different facets of planning work are changing. At a broad level our argument is that a much wider range of issues and practices, including for example work-life balance and organisational change, need to be considered alongside issues such as professionalism and ethics when thinking about what it means to work in the public interest. In doing so we hope to stimulate broader debate within and beyond the planning profession about the nature and value of planning. We also aim to highlight a series of key questions and challenges that are shaping planners’ work and that will have significant implications for the future

    Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction

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    Modelling of the interaction between Hot Carrier Aging (HCA) and Positive Bias Temperature Instability (PBTI) has been considered as one of the main challenges in nanoscale CMOS circuit design. Previous works were mainly based on separate HCA and PBTI instead of Interacted HCA-PBTI Degradation (IHPD). The key advance of this work is to develop a methodology that enables accurate modelling of IHPD through understanding the charging/discharging and generation kinetics of different types of defects during the interaction between HCA and PBTI. It is found that degradation during alternating HCA and PBTI stress cannot be modelled by independent HCI/PBTI. Different stress sequence, i.e. HCA-PBTI-HCA and PBTI-HCA-PBTI, lead to completely different degradation kinetics. Based on the Cyclic Anti-neutralization Model (CAM), for the first time, IHPD has been accurately modelled for both short and long channel devices. Complex degradation mechanisms and kinetics can be well explained by our model. Our results show that device lifetime can be underestimated by one decade without considering interaction

    Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging

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    The access transistor of SRAM can suffer both Positive Bias Temperature Instability (PBTI) and Hot Carrier Aging (HCA) during operation. The understanding of electron traps (ETs) is still incomplete and there is little information on their similarity and differences under these two stress modes. The key objective of this paper is to investigate ETs in terms of energy distribution, charging and discharging properties, and generation. We found that both PBTI and HCA can charge ETs which center at 1.4eV below conduction band (Ec) of high-k (HK) dielectric, agreeing with theoretical calculation. For the first time, clear evidences are presented that HCA generates new ETs, which do not exist when stressed by PBTI. When charged, the generated ETs’ peak is 0.2eV deeper than that of pre-existing ETs. In contrast with the power law kinetics for charging the pre-existing ETs, filling the generated ETs saturates in seconds, even under an operation bias of 0.9 V. ET generation shortens device lifetime and must be included in modelling HCA. A cyclic and anti-neutralization ETs model (CAM) is proposed to explain PBTI and HCA degradation, which consists of pre-existing cyclic electron traps (PCET), generated cyclic electron traps (GCET), and anti-neutralization electron traps (ANET)

    Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM

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    As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging process again. This has motivated re-visiting HCA, but recent works have focused on accelerated HCA by raising stress biases and there is little information on HCA under use-biases. Early works proposed that HCA mechanism under high and low biases are different, questioning if the high-bias data can be used for predicting HCA under use-bias. A key advance of this work is proposing a new methodology for evaluating the HCA-induced variation under use-bias. For the first time, the capability of predicting HCA under use-bias is experimentally verified. The importance of separating RTN from HCA is demonstrated. We point out the HCA measured by the commercial Source-Measure-Unit (SMU) gives erroneous power exponent. The proposed methodology minimizes the number of tests and the model requires only 3 fitting parameters, making it readily implementable

    Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation

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    To predict the negative bias temperature instability (NBTI) towards the end of pMOSFETs’ 10 years lifetime, power-law based extrapolation is the industrial standard method. The prediction accuracy crucially depends on the accuracy of time exponents, n. The n reported by early work spreads in a wide range and varies with measurement conditions, which can lead to unacceptable errors when extrapolated to 10 years. The objective of this work is to find how to make the n extraction independent of measurement conditions. After removing the contribution from as-grown hole traps (AHT), a new method is proposed to capture the generated defects (GD) in their entirety. The n extracted by this method is around 0.2 and insensitive to measurement conditions for the four fabrication processes we tested. The model based on this method is verified by comparing its prediction with measurements. Under AC operation, the model predicts that GD can contribute to ~90% of NBTI at 10 years

    Towards Better Territorial Governance in Europe. A guide for practitioners, policy and decision makers based on contributions from the ESPON TANGO Project

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    Guides help you do things. You turn to them when you need to find out how to solve a problem. They are a form of knowledge transfer, written by experts but in a way that is accessible and helpful to a wide group of users. This Guide was written by the researchers on the ESPON applied research study of Territorial Approaches to New Governance (TANGO). It aims to help those persons and institutions that are delivering territorial governance across Europ

    Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction

    Get PDF
    Modelling of the interaction between Hot Carrier Aging (HCA) and Positive Bias Temperature Instability (PBTI) has been considered as one of the main challenges in nanoscale CMOS circuit design. Previous works were mainly based on separate HCA and PBTI instead of Interacted HCA-PBTI Degradation (IHPD). The key advance of this work is to develop a methodology that enables accurate modelling of IHPD through understanding the charging/discharging and generation kinetics of different types of defects during the interaction between HCA and PBTI. It is found that degradation during alternating HCA and PBTI stress cannot be modelled by independent HCI/PBTI. Different stress sequence, i.e. HCA-PBTI-HCA and PBTI-HCA-PBTI, lead to completely different degradation kinetics. Based on the Cyclic Anti-neutralization Model (CAM), for the first time, IHPD has been accurately modelled for both short and long channel devices. Complex degradation mechanisms and kinetics can be well explained by our model. Our results show that device lifetime can be underestimated by one decade without considering interaction

    Towards Better Territorial Governance in Europe. A guide for practitioners, policy and decision makers based on contributions from the ESPON TANGO Project

    Get PDF
    Guides help you do things. You turn to them when you need to find out how to solve a problem. They are a form of knowledge transfer, written by experts but in a way that is accessible and helpful to a wide group of users. This Guide was written by the researchers on the ESPON applied research study of Territorial Approaches to New Governance (TANGO). It aims to help those persons and institutions that are delivering territorial governance across Europe
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