Analysis of electron capture at oxide traps by electric field injection

Electron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investigated by modeling. We demonstrate the influence on flat-band voltage by the sharpness of the interlayer/silicon interface and by the properties of traps in the oxide. Since charge carrier injection in this kind of structures may take place by two different processes simultaneously, excluding one or the other in the interpretation of data may lead to considerable erroneous results in extracted values of capture cross sections

Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond

Over the last decade there has been a significant amount of research dedicated to finding a suitable high-k/metal gate stack to replace conventional SiON/poly-Si electrodes. Materials innovations and dedicated engineering work has enabled the transition from research lab to 300 mm production a reality, thereby making high-k/metal gate technology a pathway for continued transistor scaling. In this paper, we will present current status and trends in rare earthbased materials innovations; in particular Gd-based, for the high-k/metal gate technology in the 22 nm node. Key issues and challenges for the 22 nm node and beyond are also highlighted.</jats:p

Modelling of Mg doped ZnO TFTs

The ever increase in use of ZnO TFTs requires further in depth analysis to obtain the true transport mechanisms. This paper explores the modelling of MgZnO TFTs using a defect state based model based on multiple trapping and release and successfully validates the model with the fitting parameters VFB, To, Nt and σo

Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond, Journal of Telecommunications and Information Technology, 2009, nr 4

Over the last decade there has been a significant amount of research dedicated to finding a suitable high-k/metal gate stack to replace conventional SiON/poly-Si electrodes. Materials innovations and dedicated engineering work has enabled the transition from research lab to 300 mm production a reality, thereby making high-k/metal gate technology a pathway for continued transistor scaling. In this paper, we will present current status and trends in rare earthbased materials innovations; in particular Gd-based, for the high-k/metal gate technology in the 22 nm node. Key issues and challenges for the 22 nm node and beyond are also highlighted

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

The impedance spectroscopy measurements were used to investigate the separated contributions of diamond grains and grain boundaries (GBs), giving an insight into p-type to n-type conductivity conversion in O+-implanted ultrananocrystalline diamond (UNCD) films. It is found that both diamond grains and GBs promote the conductivity in O+-implanted UNCD films, in which GBs make at least half contribution. The p-type conductivity in O+-implanted samples is a result of H-terminated diamond grains, while n-type conductive samples are closely correlated with O-terminated O+-implanted diamond grains and GBs in the films. The results also suggest that low resistance of GBs is preferable to obtain high mobility n-type conductive UNCD films

The influence of population density and duration of breeding on broiler chickens productivity and profitability

Fattening of broiler chickens is a very specific production process characterized by intensive production principles, rapid increase in broilers, small consumption of food/kg of gain (feed conversion ratio) and a large production of broilers&#8217; meat per square meter of surface. In order to increase the profitability of this production, the intention of farmers is to reduce the duration of production as well as to increase population density, with the aim of increasing the production of broiler chickens&#8217; meat,calculated per unit of surface (m2). However, most of the countries in the world, in order to protect and preserve the welfare of poultry, limit the maximum of broilers&#8217; meat production by regulations and standards. These researches aim to determine the optimal density and duration of fattening in a way to achieve the best production results and the profitability of fattening the broiler chickens hybrids Cobb 500 in temperate continental climate, while preserving the welfare of poultry. From six different population densities (16.84, 16.33, 14.29, 12.75, 14.80 and 15.46 birds per m2) and fattening period between 37 and 40 days, the best production and economic performance showed that a group ofchickens that was fattened in a period of 40 days had a population density of about 16 birds per m2. This group of broilers produced the most meat per m2 (about 33 kg), the welfare of poultry is maintained and the standard was not exceeded, so we can say that the best economy and profitability of fattening broiler chickens in the concerned region is achieved. In other groups of chickens, profitability could be more advantageous if the increased population density goes up to 16 birds perm2; or the duration of fattening could be extended up to 40 days and by this way the welfare of poultry would not be violated

Band alignments at Ga₂O₃ heterojunction interfaces with Si and Ge

Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the Kraut Method. The valence band offsets were determined to be 3.49± 0.08 eV and 3.47± 0.08 eV with Si(111) and Si(100) respectively and 3.51eV± 0.08 eV with Ge(100). Inverse photoemission spectroscopy (IPES) was used to investigate the conduction band of a thick Ga2O3 film and the band gap of the film was determined to be 4.63±0.14 eV. The conduction band offsets were found to be 0.03 eV and 0.05eV with Si(111) and Si(100) respectively, and 0.45eV with Ge(100). The results indicate that the heterojunctions of Ga2O3 with Si(100), Si(111) and Ge(100) are all type I heterojunctions

Electrical and Chemical Analysis of the In-situ H2 Plasma Cleaned InGaSb-Al2O3 Interface

No abstract available

Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device