<Reports on the Ninth Annual Meeting of the Tsukuba English Linguistic Society> The DP Hypothesis and its Theoretical Implications

The following contrast discussed by Stowell (1987) seems to support the view that there are two types of "subject" of nouns phrases : (1) a. Who did you sell a picture of? ..

Mapping from DS to SS : a case of Japanese psych-verbs

In this joint research we discussed the following constructions with psych-verbs: (1) a. sono aidalu lasyu-ga John-o sitsubousa-se-ta koto the idol-NOM John-Acc dissapoint-CAUSE-PAST fact \u27The idol disappointed John.\u27 ..

Soft X-ray Absorption and Photoemission Studies of Ferromagnetic Mn-Implanted 3CC-SiC

We have performed x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and resonant photoemission spectroscopy (RPES) measurements of Mn-implanted 3$C$-SiC (3$C$-SiC:Mn) and carbon-incorporated Mn$_{5}$Si$_{2}$ (Mn$_{5}$Si$_{2}$:C). The Mn 2$p$ core-level XPS and XAS spectra of 3$C$-SiC:Mn and Mn$_{5}$Si$_{2}$:C were similar to each other and showed "intermediate" behaviors between the localized and itinerant Mn 3$d$ states. The intensity at the Fermi level was found to be suppressed in 3$C$-SiC:Mn compared with Mn$_{5}$Si$_{2}$:C. These observations are consistent with the formation of Mn$_{5}$Si$_{2}$:C clusters in the 3$C$-SiC host, as observed in a recent transmission electron microscopy study.Comment: 4 pages, 3 figure

Investigation of superconductivity in Ce-doped (La,Pr)OBiS2 single crystals

Single crystals of Ce-doped (La,Pr)OBiS2 superconductors, multinary rare-earth elements substituted ROBiS2, were successfully grown. The grown crystals typically had a size of 1-2 mm and a plate-like shape with a well-developed c-plane. The c-axis lattice constants of the obtained (La,Ce,Pr)OBiS2 single crystals were approximately 13.6-13.7 A, and the superconducting transition temperature was 1.23-2.18 K. Valence fluctuations of Ce and Pr were detected through X-ray absorption spectroscopy analysis. In contrast to (Ce,Pr)OBiS2 and (La,Ce)OBiS2, the superconducting transition temperature of (La,Ce,Pr)OBiS2 increased with increasing concentrations of the tetravalent state at the R-site

Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence

The boron concentration dependence of the Si electronic structure of Si(100)2 × 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition