87,582 research outputs found

    Performance of Cross-layer Design with Multiple Outdated Estimates in Multiuser MIMO System

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    By combining adaptive modulation (AM) and automatic repeat request (ARQ) protocol as well as user scheduling, the cross-layer design scheme of multiuser MIMO system with imperfect feedback is presented, and multiple outdated estimates method is proposed to improve the system performance. Based on this method and imperfect feedback information, the closed-form expressions of spectral efficiency (SE) and packet error rate (PER) of the system subject to the target PER constraint are respectively derived. With these expressions, the system performance can be effectively evaluated. To mitigate the effect of delayed feedback, the variable thresholds (VTs) are also derived by means of the maximum a posteriori method, and these VTs include the conventional fixed thresholds (FTs) as special cases. Simulation results show that the theoretical SE and PER are in good agreement with the corresponding simulation. The proposed CLD scheme with multiple estimates can obtain higher SE than the existing CLD scheme with single estimate, especially for large delay. Moreover, the CLD scheme with VTs outperforms that with conventional FTs

    Modeling the AgInSbTe Memristor

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    The AgInSbTe memristor shows gradual resistance tuning characteristics, which makes it a potential candidate to emulate biological plastic synapses. The working mechanism of the device is complex, and both intrinsic charge-trapping mechanism and extrinsic electrochemical metallization effect are confirmed in the AgInSbTe memristor. Mathematical model of the AgInSbTe memristor has not been given before. We propose the flux-voltage controlled memristor model. With piecewise linear approximation technique, we deliver the flux-voltage controlled memristor model of the AgInSbTe memristor based on the experiment data. Our model fits the data well. The flux-voltage controlled memristor model and the piecewise linear approximation method are also suitable for modeling other kinds of memristor devices based on experiment data
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