42,770 research outputs found
Etching-dependent reproducible memory switching in vertical SiO2 structures
Vertical structures of SiO sandwiched between a top tungsten electrode
and conducting non-metal substrate were fabricated by dry and wet etching
methods. Both structures exhibit similar voltage-controlled memory behaviors,
in which short voltage pulses (1 s) can switch the devices between high-
and low-impedance states. Through the comparison of current-voltage
characteristics in structures made by different methods, filamentary conduction
at the etched oxide edges is most consistent with the results, providing
insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios
of over 10 were demonstrated.Comment: 6 pages, 3 figures + 2 suppl. figure
MOCVD synthesis of compositionally tuned topological insulator nanowires
Device applications involving topological insulators (TIs) will require the
development of scalable methods for fabricating TI samples with sub-micron
dimensions, high quality surfaces, and controlled compositions. Here we use
Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form
of nanowires. Single crystal nanowires can be grown with compositions ranging
from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high
quality nanostructured TI compounds are suitable platforms for on-going
searches for Majorana Fermions
R-matrices and Tensor Product Graph Method
A systematic method for constructing trigonometric R-matrices corresponding
to the (multiplicity-free) tensor product of any two affinizable
representations of a quantum algebra or superalgebra has been developed by the
Brisbane group and its collaborators. This method has been referred to as the
Tensor Product Graph Method. Here we describe applications of this method to
untwisted and twisted quantum affine superalgebras.Comment: LaTex 7 pages. Contribution to the APCTP-Nankai Joint Symposium on
"Lattice Statistics and Mathematical Physics", 8-10 October 2001, Tianjin,
Chin
Final Report: Wall Effects in Cavity Flows
The wall effects in cavity flows past an arbitrary two-dimensional body is investigated for both pure-drag and lifting cases based on an inviscid nonlinear flow theory. The over-all features of various theoretical flow models for inviscid cavity flows under the wall effects are discussed from the general momentum consideration in comparison with typical viscous, incompressible wake flows in a channel. In the case of pure drag cavity flows, three theoretical models in common use, namely, the open-wake, Riabouchinsky and re-entrant jet models, are applied to evaluate the solution. Methods of numerical computation are discussed for bodies of arbitrary shape, and are carried out in detail for wedges of all angles. The final numerical results are compared between the different flow models, and the differences pointed out. Further analysis of the results has led to development of several useful formulas for correcting the wall effect. In the lifting flow case, the wall effect on the pressure and hydrodynamic forces acting on arbitrary body is formulated for the choked cavity flow in a closed water tunnel of arbitrary shape, and computed for the flat plate with a finite cavity in a straight tunnel
Band structure renormalization and weak pseudogap behavior in Na_{0.33}CoO_2: Fluctuation exchange study based on a single band model
Based on a single band Hubbard model and the fluctuation exchange
approximation, the effective mass and the energy band renormalization in
NaCoO is elaborated. The renormalization is observed to exhibit
certain kind of anisotropy, which agrees qualitatively with the angle-resolved
photoemission spectroscopy (ARPES) measurements. Moreover, the spectral
function and density of states (DOS) in the normal state are calculated, with a
weak pseudogap behavior being seen, which is explained as a result of the
strong Coulomb correlations. Our results suggest that the large Fermi surface
(FS) associated with the band plays likely a central role in the
charge dynamics.Comment: 5 pages, 5 figure
Theory of control of spin/photon interface for quantum networks
A cavity coupling a charged nanodot and a fiber can act as a quantum
interface, through which a stationary spin qubit and a flying photon qubit can
be inter-converted via cavity-assisted Raman process. This Raman process can be
controlled to generate or annihilate an arbitrarily shaped single-photon
wavepacket by pulse-shaping the controlling laser field. This quantum interface
forms the basis for many essential functions of a quantum network, including
sending, receiving, transferring, swapping, and entangling qubits at
distributed quantum nodes as well as a deterministic source and an efficient
detector of a single photon wavepacket with arbitrarily specified shape and
average photon number. Numerical study of noise effects on the operations shows
high fidelity.Comment: 4 pages, 2 figure
Energy Density Functional analysis of shape evolution in N=28 isotones
The structure of low-energy collective states in proton-deficient N=28
isotones is analyzed using structure models based on the relativistic energy
density functional DD-PC1. The relativistic Hartree-Bogoliubov model for
triaxial nuclei is used to calculate binding energy maps in the
- plane. The evolution of neutron and proton single-particle
levels with quadrupole deformation, and the occurrence of gaps around the Fermi
surface, provide a simple microscopic interpretation of the onset of
deformation and shape coexistence. Starting from self-consistent constrained
energy surfaces calculated with the functional DD-PC1, a collective Hamiltonian
for quadrupole vibrations and rotations is employed in the analysis of
excitation spectra and transition rates of Ar, S, and Si.
The results are compared to available data, and previous studies based either
on the mean-field approach or large-scale shell-model calculations. The present
study is particularly focused on S, for which data have recently been
reported that indicate pronounced shape coexistence.Comment: 31 pages, 11 figures. arXiv admin note: text overlap with
arXiv:1102.419
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