Petrov type I Condition and Rindler Fluid in Vacuum Einstein-Gauss-Bonnet Gravity

Recently the Petrov type I condition is introduced to reduce the degrees of freedom in the extrinsic curvature of a timelike hypersurface to the degrees of freedom in the dual Rindler fluid in Einstein gravity. In this paper we show that the Petrov type I condition holds for the solutions of vacuum Einstein-Gauss-Bonnet gravity up to the second order in the relativistic hydrodynamic expansion. On the other hand, if imposing the Petrov type I condition and Hamiltonian constraint on a finite cutoff hypersurface, the stress tensor of the relativistic Rindler fluid in vacuum Einstein-Gauss-Bonnet gravity can be recovered with correct first order and second order transport coefficients.Comment: 25 page

2-(Dibutyl­amino)-3-(4-fluoro­phen­yl)-5,6,7,8-tetra­hydro-7-methyl-6,8-di­phenyl­pyridine­[3′,4′:2,3]thieno[5,4-d]pyrimidin-4(3H)-one

In the crystal structure of the title compound, C36H39FN4OS, the two fused rings of the thienopyrimidine system are coplanar. The 4-fluoro­phenyl ring is twisted with respect to the heterocyclic pyrimidinone ring by 67.21 (14)°. The piperidine ring shows a half-chair conformation. One of the n-butyl chains is disordered equally over two sites. The crystal packing is stabilized by C—H⋯O hydrogen bonds

Holographic Charged Fluid with Chiral Electric Separation Effect

Hydrodynamics with both vector and axial currents is under study within a holographic model, consisting of canonical $U(1)_V\times U(1)_A$ gauge fields in an asymptotically AdS$_5$ black brane. When gravitational back-reaction is taken into account, the chiral electric separation effect (CESE), namely the generation of an axial current as the response to an external electric field, is realized naturally. Via fluid/gravity correspondence, all the first order transport coefficients in the hydrodynamic constitutive relations are evaluated analytically: they are functions of vector chemical potential $\mu$, axial chemical potential $\mu_5$ and the fluid's temperature $T$. Apart from the proportionality factor $\mu\mu_5$, the CESE conductivity is found to be dependent on the dimensionless quantities $\mu/T$ and $\mu_5/T$ nontrivially. As a complementary study, frequency-dependent transport phenomena are revealed through linear response analysis, demonstrating perfect agreement with the results obtained from fluid/gravity correspondence.Comment: 39 pages, 6 figures, 1 table; Matches published version, the main results are summarized in sec 1.1 and we thank the referee for valuable suggestion

Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon

The damaging effect of mono- and diatomic phosphorus and arsenic ions implanted into silicon was investigated by spectroscopic ellipsometry (SE) and high-depth-resolution Rutherford backscattering and channeling techniques. A comparison was made between the two methods to check the capability of ellipsometry to examine the damage formed by room temperature implantation into silicon. For the analysis of the spectroscopic ellipsometry data we used the conventional method of assuming appropriate optical models and fitting the model parameters (layer thicknesses and volume fractions of the amorphous silicon component in the layers) by linear regression. The depth dependence of the damage was determined by both methods. It was revealed that SE can be used to investigate the radiation damage of semiconductors together with appropriate optical model construction which can be supported or independently checked by the channeling method. However, in case of low level damage (consisting mainly of isolated point defects) ellipsometry can give false results, overestimating the damage using inappropriate dielectric functions. In that case checking by other methods like channeling is desirable